Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

Min Soo Bae, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM). Effects of doping concentration, gate metal grain-related parameters, and device parameter scaling on RDF, WFV, and OTV induced variability are studied using the standard deviations of threshold voltage (σ Vth) and subthreshold slope (σ Ssub). As a result, we find that a relatively low doping concentration helps alleviate process variability. As average grain size increases, different mechanisms of σ Vth and σ Ssub degradation are analyzed for WFV and OTV induced variability. Compared to WFV and OTV, RDF is revealed as the most significant source of variability as devices scale down. It is observed that fin width (W fin) and oxide thickness (t ox) scaling leads to the reduction of RDF induced variability, whereas channel length (L) and fin height (H fin) scaling results in aggravation of RDF, WFV, and OTV induced variability.

Original languageEnglish
Article number035015
JournalSemiconductor Science and Technology
Volume35
Issue number3
DOIs
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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