Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance

Min Gyu Sung, Kwan Yong Lim, Heung Jae Cho, Seung Ryong Lee, Se Aug Jang, Hong Seon Yang, Kwangok Kim, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages374-378
Number of pages5
DOIs
Publication statusPublished - 2006 Dec 1
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 2006 Mar 262006 Mar 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period06/3/2606/3/30

Fingerprint

Contact resistance
Tungsten
Oxides
Polysilicon
Nitrides
Masks

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sung, M. G., Lim, K. Y., Cho, H. J., Lee, S. R., Jang, S. A., Yang, H. S., ... Kim, J. W. (2006). Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 374-378). [4017187] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251247
Sung, Min Gyu ; Lim, Kwan Yong ; Cho, Heung Jae ; Lee, Seung Ryong ; Jang, Se Aug ; Yang, Hong Seon ; Kim, Kwangok ; Kwak, Noh Jung ; Sohn, Hyun Chul ; Kim, Jin Woong. / Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. pp. 374-378 (IEEE International Reliability Physics Symposium Proceedings).
@inproceedings{6cdc7dc25d53474c9fc2242c754e6ba6,
title = "Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance",
abstract = "By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.",
author = "Sung, {Min Gyu} and Lim, {Kwan Yong} and Cho, {Heung Jae} and Lee, {Seung Ryong} and Jang, {Se Aug} and Yang, {Hong Seon} and Kwangok Kim and Kwak, {Noh Jung} and Sohn, {Hyun Chul} and Kim, {Jin Woong}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/RELPHY.2006.251247",
language = "English",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "374--378",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

}

Sung, MG, Lim, KY, Cho, HJ, Lee, SR, Jang, SA, Yang, HS, Kim, K, Kwak, NJ, Sohn, HC & Kim, JW 2006, Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017187, IEEE International Reliability Physics Symposium Proceedings, pp. 374-378, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 06/3/26. https://doi.org/10.1109/RELPHY.2006.251247

Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. / Sung, Min Gyu; Lim, Kwan Yong; Cho, Heung Jae; Lee, Seung Ryong; Jang, Se Aug; Yang, Hong Seon; Kim, Kwangok; Kwak, Noh Jung; Sohn, Hyun Chul; Kim, Jin Woong.

2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 374-378 4017187 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance

AU - Sung, Min Gyu

AU - Lim, Kwan Yong

AU - Cho, Heung Jae

AU - Lee, Seung Ryong

AU - Jang, Se Aug

AU - Yang, Hong Seon

AU - Kim, Kwangok

AU - Kwak, Noh Jung

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

PY - 2006/12/1

Y1 - 2006/12/1

N2 - By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.

AB - By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.

UR - http://www.scopus.com/inward/record.url?scp=34250718112&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250718112&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2006.251247

DO - 10.1109/RELPHY.2006.251247

M3 - Conference contribution

AN - SCOPUS:34250718112

SN - 0780394992

SN - 0780394984

SN - 9780780394988

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 374

EP - 378

BT - 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual

ER -

Sung MG, Lim KY, Cho HJ, Lee SR, Jang SA, Yang HS et al. Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 374-378. 4017187. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251247