Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance

Min Gyu Sung, Kwan Yong Lim, Heung Jae Cho, Seung Ryong Lee, Se Aug Jang, Hong Seon Yang, Kwangok Kim, Noh Jung Kwak, Hyun Chul Sohn, Jin Woong Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

By inserting thin WSix layer in tungsten poly gate stack we can effectively relieve the mechanical stress of gate hard mask nitride film, which contributes to the better gate oxide reliability and stress-immunity of trasistor. This insertion also could prevent the formation of Si-N dielectric layer atop poly-Si, which could lower the contact resistance between poly and tungsten effectively.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages374-378
Number of pages5
DOIs
Publication statusPublished - 2006 Dec 1
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 2006 Mar 262006 Mar 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period06/3/2606/3/30

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sung, M. G., Lim, K. Y., Cho, H. J., Lee, S. R., Jang, S. A., Yang, H. S., Kim, K., Kwak, N. J., Sohn, H. C., & Kim, J. W. (2006). Impact of thin WSiX insertion in tungsten polymetal gate on gate oxide reliability and gate contact resistance. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 374-378). [4017187] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251247