Implementation of side effects in thermal characterization of RGB full-color LEDs

Lan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8 °C temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.

Original languageEnglish
Pages (from-to)578-580
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

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Light emitting diodes
Color
Heat resistance
Temperature
Induced currents
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Implementation of side effects in thermal characterization of RGB full-color LEDs. / Kim, Lan; Shin, Moo Whan.

In: IEEE Electron Device Letters, Vol. 28, No. 7, 01.07.2007, p. 578-580.

Research output: Contribution to journalArticle

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