Implementation of side effects in thermal characterization of RGB full-color LEDs

Lan Kim; Moo Whan Shin

doi:10.1109/LED.2007.899327

Implementation of side effects in thermal characterization of RGB full-color LEDs

Lan Kim, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8 °C temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.

Original language	English
Pages (from-to)	578-580
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	7
DOIs	https://doi.org/10.1109/LED.2007.899327
Publication status	Published - 2007 Jul 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Kim, L., & Shin, M. W. (2007). Implementation of side effects in thermal characterization of RGB full-color LEDs. IEEE Electron Device Letters, 28(7), 578-580. https://doi.org/10.1109/LED.2007.899327

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10.1109/LED.2007.899327