Abstract
This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8 °C temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.
| Original language | English |
|---|---|
| Pages (from-to) | 578-580 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 28 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Implementation of side effects in thermal characterization of RGB full-color LEDs. / Kim, Lan; Shin, Moo Whan.
In: IEEE Electron Device Letters, Vol. 28, No. 7, 01.07.2007, p. 578-580.Research output: Contribution to journal › Article
TY - JOUR
T1 - Implementation of side effects in thermal characterization of RGB full-color LEDs
AU - Kim, Lan
AU - Shin, Moo Whan
PY - 2007/7/1
Y1 - 2007/7/1
N2 - This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8 °C temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.
AB - This letter presents a useful thermal-characterization method for RGB full-color light-emitting diodes (LEDs). The superposition method was employed to calculate thermal resistances of a high-power RGB full-color LED package to implement the side effect. Independent driving of a single chip in the RGB package clearly exhibited a side effect on the other two chips. It was shown that driving a red chip at 350 mA, current induced 4.8 °C temperature rise for the green and blue chips, which is about 30% of the temperature rise in the red chip itself. A thermal-resistance-coupling matrix was structured and used for the calculation of the junction temperatures of the chips. It was demonstrated that the superposition method can be employed for an accurate prediction of the junction temperature rises for the RGB full-color LED package.
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UR - http://www.scopus.com/inward/citedby.url?scp=34447261898&partnerID=8YFLogxK
U2 - 10.1109/LED.2007.899327
DO - 10.1109/LED.2007.899327
M3 - Article
VL - 28
SP - 578
EP - 580
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 7
ER -