Improved bias stability of solution-processed ZnSnO thin-film transistors by Zr addition

You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

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Abstract

We investigated the effect of adsorption of specific molecules on undoped zinc tin oxide (ZTO) and zirconium (Zr)-doped zinc tin oxide (ZZTO) thin-film transistors (TFTs) using a solution process. The specific chemisorbed species on the back channel region produced unstable ZTO TFT electrical properties under a bias stress test. However, the amount of specific chemisorbed ZTO TFT species could be controlled by Zr doping. As a result, the threshold voltage shift of the ZZTO TFT was dramatically improved comparing the ZTO TFT under positive bias stress.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume15
Issue number2
DOIs
Publication statusPublished - 2012 Jan 1

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

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