The addition of Cu becomes essential in polycrystalline n-type Bi2(Te,Se)3-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range.
Bibliographical noteFunding Information:
This work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys