Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys

Kyu Hyoung Lee, Hyun Sik Kim, Sung sil Choo, Weon Ho Shin, Jae Hong Lim, Sung Wng Kim, Sang il Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The addition of Cu becomes essential in polycrystalline n-type Bi2(Te,Se)3-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range.

Original languageEnglish
Pages (from-to)357-361
Number of pages5
JournalScripta Materialia
Volume186
DOIs
Publication statusPublished - 2020 Sep

Bibliographical note

Funding Information:
This work was supported by the Samsung Research Funding & Incubation Center of Samsung Electronics under Project Number SRFC-MA1701-05.

Publisher Copyright:
© 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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