Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

Myungwoo Choi; Jinwook Baek; Huije Ryu; Hyejeong Lee; Jicheol Byen; Seong Gu Hong; Bum Jun Kim; Sooheon Cho; Jae Yong Song; Gwan Hyoung Lee; Hosun Shin; Jae Young Choi; Seokwoo Jeon

doi:10.1021/acs.nanolett.2c00927

Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

Myungwoo Choi, Jinwook Baek, Huije Ryu, Hyejeong Lee, Jicheol Byen, Seong Gu Hong, Bum Jun Kim, Sooheon Cho, Jae Yong Song, Gwan Hyoung Lee, Hosun Shin, Jae Young Choi, Seokwoo Jeon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Over the past few years, many efforts have been devoted to growing single-crystal graphene due to its great potential in future applications. However, a number of issues remain for single-crystal graphene growth, such as control of nanoscale defects and the substrate-dependent nonuniformity of graphene quality. In this work, we demonstrate a possible route toward single-crystal graphene by combining aligned nucleation of graphene nanograins on Cu/Ni (111) and sequential heat treatment over pregrown graphene grains. By use of a mobile hot-wire CVD system, prealigned grains were stitched into one continuous film with up to ∼97% single-crystal domains, compared to graphene grown on polycrystalline Cu, which was predominantly high-angle tilt boundary (HATB) domains. The single-crystal-like graphene showed remarkably high thermal conductivity and carrier mobility of ∼1349 W/mK at 350 K and ∼33 »600 (38 »400) cm²V^-1s^-1for electrons (holes), respectively, which indicates that the crystallinity is high due to suppression of HATB domains.

Original language	English
Pages (from-to)	5198-5206
Number of pages	9
Journal	Nano letters
Volume	22
Issue number	13
DOIs	https://doi.org/10.1021/acs.nanolett.2c00927
Publication status	Published - 2022 Jul 13

Bibliographical note

Funding Information:
This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2017-M3D1A1039558), supported by Characterization of Mechanical/Thermal/Chemical Properties of EUV Absorption/Transmission Materials through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2020-M3H4A3081882), supported by Characterization Platform for Advanced Materials funded by Korea Research Institute of Standards and Science (Grant KRISS-2021-GP2021-0011), and supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (Grant 2020-M3D1A1110522). Also, G.-H.L. acknowledges support from the National Research Foundation of Korea (NRF) (Grant 2021-R1A2C3014316).

Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/acs.nanolett.2c00927

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title = "Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment",

abstract = "Over the past few years, many efforts have been devoted to growing single-crystal graphene due to its great potential in future applications. However, a number of issues remain for single-crystal graphene growth, such as control of nanoscale defects and the substrate-dependent nonuniformity of graphene quality. In this work, we demonstrate a possible route toward single-crystal graphene by combining aligned nucleation of graphene nanograins on Cu/Ni (111) and sequential heat treatment over pregrown graphene grains. By use of a mobile hot-wire CVD system, prealigned grains were stitched into one continuous film with up to ∼97% single-crystal domains, compared to graphene grown on polycrystalline Cu, which was predominantly high-angle tilt boundary (HATB) domains. The single-crystal-like graphene showed remarkably high thermal conductivity and carrier mobility of ∼1349 W/mK at 350 K and ∼33 »600 (38 »400) cm2V-1s-1for electrons (holes), respectively, which indicates that the crystallinity is high due to suppression of HATB domains.",

author = "Myungwoo Choi and Jinwook Baek and Huije Ryu and Hyejeong Lee and Jicheol Byen and Hong, {Seong Gu} and Kim, {Bum Jun} and Sooheon Cho and Song, {Jae Yong} and Lee, {Gwan Hyoung} and Hosun Shin and Choi, {Jae Young} and Seokwoo Jeon",

note = "Funding Information: This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2017-M3D1A1039558), supported by Characterization of Mechanical/Thermal/Chemical Properties of EUV Absorption/Transmission Materials through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2020-M3H4A3081882), supported by Characterization Platform for Advanced Materials funded by Korea Research Institute of Standards and Science (Grant KRISS-2021-GP2021-0011), and supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (Grant 2020-M3D1A1110522). Also, G.-H.L. acknowledges support from the National Research Foundation of Korea (NRF) (Grant 2021-R1A2C3014316). Publisher Copyright: {\textcopyright} 2022 American Chemical Society. All rights reserved.",

year = "2022",

month = jul,

day = "13",

doi = "10.1021/acs.nanolett.2c00927",

language = "English",

volume = "22",

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T1 - Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

AU - Choi, Myungwoo

AU - Baek, Jinwook

AU - Ryu, Huije

AU - Lee, Hyejeong

AU - Byen, Jicheol

AU - Hong, Seong Gu

AU - Kim, Bum Jun

AU - Cho, Sooheon

AU - Song, Jae Yong

AU - Lee, Gwan Hyoung

AU - Shin, Hosun

AU - Choi, Jae Young

AU - Jeon, Seokwoo

N1 - Funding Information: This research was supported by the Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2017-M3D1A1039558), supported by Characterization of Mechanical/Thermal/Chemical Properties of EUV Absorption/Transmission Materials through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (Grant 2020-M3H4A3081882), supported by Characterization Platform for Advanced Materials funded by Korea Research Institute of Standards and Science (Grant KRISS-2021-GP2021-0011), and supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (Grant 2020-M3D1A1110522). Also, G.-H.L. acknowledges support from the National Research Foundation of Korea (NRF) (Grant 2021-R1A2C3014316). Publisher Copyright: © 2022 American Chemical Society. All rights reserved.

PY - 2022/7/13

Y1 - 2022/7/13

N2 - Over the past few years, many efforts have been devoted to growing single-crystal graphene due to its great potential in future applications. However, a number of issues remain for single-crystal graphene growth, such as control of nanoscale defects and the substrate-dependent nonuniformity of graphene quality. In this work, we demonstrate a possible route toward single-crystal graphene by combining aligned nucleation of graphene nanograins on Cu/Ni (111) and sequential heat treatment over pregrown graphene grains. By use of a mobile hot-wire CVD system, prealigned grains were stitched into one continuous film with up to ∼97% single-crystal domains, compared to graphene grown on polycrystalline Cu, which was predominantly high-angle tilt boundary (HATB) domains. The single-crystal-like graphene showed remarkably high thermal conductivity and carrier mobility of ∼1349 W/mK at 350 K and ∼33 »600 (38 »400) cm2V-1s-1for electrons (holes), respectively, which indicates that the crystallinity is high due to suppression of HATB domains.

AB - Over the past few years, many efforts have been devoted to growing single-crystal graphene due to its great potential in future applications. However, a number of issues remain for single-crystal graphene growth, such as control of nanoscale defects and the substrate-dependent nonuniformity of graphene quality. In this work, we demonstrate a possible route toward single-crystal graphene by combining aligned nucleation of graphene nanograins on Cu/Ni (111) and sequential heat treatment over pregrown graphene grains. By use of a mobile hot-wire CVD system, prealigned grains were stitched into one continuous film with up to ∼97% single-crystal domains, compared to graphene grown on polycrystalline Cu, which was predominantly high-angle tilt boundary (HATB) domains. The single-crystal-like graphene showed remarkably high thermal conductivity and carrier mobility of ∼1349 W/mK at 350 K and ∼33 »600 (38 »400) cm2V-1s-1for electrons (holes), respectively, which indicates that the crystallinity is high due to suppression of HATB domains.

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JO - Nano Letters

JF - Nano Letters

IS - 13

ER -

Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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