Abstract
A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 599-603 |
| Number of pages | 5 |
| Journal | Electronic Materials Letters |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
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Improved damp heat stability of Ga-Doped ZnO thin film by pretreatment of the polyethylene terephthalate substrate. / Kim, B. B.; Seo, S. G.; Lim, Y. S.; Choi, H. S.; Seo, W. S.; Park, Hyung-Ho.
In: Electronic Materials Letters, Vol. 9, No. 5, 01.09.2013, p. 599-603.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved damp heat stability of Ga-Doped ZnO thin film by pretreatment of the polyethylene terephthalate substrate
AU - Kim, B. B.
AU - Seo, S. G.
AU - Lim, Y. S.
AU - Choi, H. S.
AU - Seo, W. S.
AU - Park, Hyung-Ho
PY - 2013/9/1
Y1 - 2013/9/1
N2 - A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.
AB - A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.
UR - http://www.scopus.com/inward/record.url?scp=84883810116&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84883810116&partnerID=8YFLogxK
U2 - 10.1007/s13391-013-2208-1
DO - 10.1007/s13391-013-2208-1
M3 - Article
AN - SCOPUS:84883810116
VL - 9
SP - 599
EP - 603
JO - Electronic Materials Letters
JF - Electronic Materials Letters
SN - 1738-8090
IS - 5
ER -