Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh

Research output: Contribution to journalArticle

Abstract

Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

Original languageEnglish
Article number107661
JournalSolid-State Electronics
Volume163
DOIs
Publication statusPublished - 2020 Jan

Fingerprint

beryllium oxides
Beryllia
Atomic layer deposition
atomic layer epitaxy
Dielectric properties
Oxide films
dielectric properties
Plasmas
Thin films
thin films
beryllium oxide
oxygen plasma
Substrates
Leakage currents
Hysteresis
Chemical reactions
Reactive Oxygen Species
chemical reactions
Energy gap
Nucleation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Jang, Yoonseo ; Lee, Seung Min ; Jung, Do Hwan ; Yum, Jung Hwan ; Larsen, Eric S. ; Bielawski, Christopher W. ; Oh, Jungwoo. / Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition. In: Solid-State Electronics. 2020 ; Vol. 163.
@article{452fd8498c8d44238be7cba36672e0ca,
title = "Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition",
abstract = "Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.",
author = "Yoonseo Jang and Lee, {Seung Min} and Jung, {Do Hwan} and Yum, {Jung Hwan} and Larsen, {Eric S.} and Bielawski, {Christopher W.} and Jungwoo Oh",
year = "2020",
month = "1",
doi = "10.1016/j.sse.2019.107661",
language = "English",
volume = "163",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",

}

Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition. / Jang, Yoonseo; Lee, Seung Min; Jung, Do Hwan; Yum, Jung Hwan; Larsen, Eric S.; Bielawski, Christopher W.; Oh, Jungwoo.

In: Solid-State Electronics, Vol. 163, 107661, 01.2020.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

AU - Jang, Yoonseo

AU - Lee, Seung Min

AU - Jung, Do Hwan

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Bielawski, Christopher W.

AU - Oh, Jungwoo

PY - 2020/1

Y1 - 2020/1

N2 - Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

AB - Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25×10-9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

UR - http://www.scopus.com/inward/record.url?scp=85072561675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072561675&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2019.107661

DO - 10.1016/j.sse.2019.107661

M3 - Article

AN - SCOPUS:85072561675

VL - 163

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

M1 - 107661

ER -