Abstract
The authors report on the fabrication of photo-detecting top-gate ZnO-based thin-film transistors (ZnO-TFTs) with poly-4-vinylphenol (PVP) polymer gate dielectric. A ZnO channel surface was treated by intense ultraviolet (UV, wavelength of 352 nm) before making contacts with PVP dielectric. Although our UV-treated devices showed lower on-state current than untreated pristine ones, the former also displayed orders of magnitude lower off-state current than the latter. We applied the UV-treated devices for enhancing their photo-detection properties, which basically needs low off-state current. Under a modulated photon signal (10 Hz, 364 nm) for the UV detection measurements, our photo-inverter with UV-treated ZnO-TFT exhibited a good dynamic property of ∼30 ms operating at 5 V.
| Original language | English |
|---|---|
| Article number | 135102 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 41 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2008 Jul 7 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
Cite this
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Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment. / Lee, Kimoon; Kim, Ki Tae; Choi, Jeong M.; Oh, Min Suk; Hwang, D. K.; Jang, Sungjin; Kim, Eugene; Im, Seongil.
In: Journal of Physics D: Applied Physics, Vol. 41, No. 13, 135102, 07.07.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment
AU - Lee, Kimoon
AU - Kim, Ki Tae
AU - Choi, Jeong M.
AU - Oh, Min Suk
AU - Hwang, D. K.
AU - Jang, Sungjin
AU - Kim, Eugene
AU - Im, Seongil
PY - 2008/7/7
Y1 - 2008/7/7
N2 - The authors report on the fabrication of photo-detecting top-gate ZnO-based thin-film transistors (ZnO-TFTs) with poly-4-vinylphenol (PVP) polymer gate dielectric. A ZnO channel surface was treated by intense ultraviolet (UV, wavelength of 352 nm) before making contacts with PVP dielectric. Although our UV-treated devices showed lower on-state current than untreated pristine ones, the former also displayed orders of magnitude lower off-state current than the latter. We applied the UV-treated devices for enhancing their photo-detection properties, which basically needs low off-state current. Under a modulated photon signal (10 Hz, 364 nm) for the UV detection measurements, our photo-inverter with UV-treated ZnO-TFT exhibited a good dynamic property of ∼30 ms operating at 5 V.
AB - The authors report on the fabrication of photo-detecting top-gate ZnO-based thin-film transistors (ZnO-TFTs) with poly-4-vinylphenol (PVP) polymer gate dielectric. A ZnO channel surface was treated by intense ultraviolet (UV, wavelength of 352 nm) before making contacts with PVP dielectric. Although our UV-treated devices showed lower on-state current than untreated pristine ones, the former also displayed orders of magnitude lower off-state current than the latter. We applied the UV-treated devices for enhancing their photo-detection properties, which basically needs low off-state current. Under a modulated photon signal (10 Hz, 364 nm) for the UV detection measurements, our photo-inverter with UV-treated ZnO-TFT exhibited a good dynamic property of ∼30 ms operating at 5 V.
UR - http://www.scopus.com/inward/record.url?scp=48249098495&partnerID=8YFLogxK
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U2 - 10.1088/0022-3727/41/13/135102
DO - 10.1088/0022-3727/41/13/135102
M3 - Article
AN - SCOPUS:48249098495
VL - 41
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 13
M1 - 135102
ER -