Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment

Kimoon Lee; Ki Tae Kim; Jeong M. Choi; Min Suk Oh; D. K. Hwang; Sungjin Jang; Eugene Kim; Seongil Im

doi:10.1088/0022-3727/41/13/135102

Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment

Kimoon Lee, Ki Tae Kim, Jeong M. Choi, Min Suk Oh, D. K. Hwang, Sungjin Jang, Eugene Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The authors report on the fabrication of photo-detecting top-gate ZnO-based thin-film transistors (ZnO-TFTs) with poly-4-vinylphenol (PVP) polymer gate dielectric. A ZnO channel surface was treated by intense ultraviolet (UV, wavelength of 352 nm) before making contacts with PVP dielectric. Although our UV-treated devices showed lower on-state current than untreated pristine ones, the former also displayed orders of magnitude lower off-state current than the latter. We applied the UV-treated devices for enhancing their photo-detection properties, which basically needs low off-state current. Under a modulated photon signal (10 Hz, 364 nm) for the UV detection measurements, our photo-inverter with UV-treated ZnO-TFT exhibited a good dynamic property of ∼30 ms operating at 5 V.

Original language	English
Article number	135102
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	13
DOIs	https://doi.org/10.1088/0022-3727/41/13/135102
Publication status	Published - 2008 Jul 7

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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title = "Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment",

abstract = "The authors report on the fabrication of photo-detecting top-gate ZnO-based thin-film transistors (ZnO-TFTs) with poly-4-vinylphenol (PVP) polymer gate dielectric. A ZnO channel surface was treated by intense ultraviolet (UV, wavelength of 352 nm) before making contacts with PVP dielectric. Although our UV-treated devices showed lower on-state current than untreated pristine ones, the former also displayed orders of magnitude lower off-state current than the latter. We applied the UV-treated devices for enhancing their photo-detection properties, which basically needs low off-state current. Under a modulated photon signal (10 Hz, 364 nm) for the UV detection measurements, our photo-inverter with UV-treated ZnO-TFT exhibited a good dynamic property of ∼30 ms operating at 5 V.",

author = "Kimoon Lee and Kim, {Ki Tae} and Choi, {Jeong M.} and Oh, {Min Suk} and Hwang, {D. K.} and Sungjin Jang and Eugene Kim and Seongil Im",

year = "2008",

month = jul,

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doi = "10.1088/0022-3727/41/13/135102",

language = "English",

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journal = "Journal Physics D: Applied Physics",

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Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment. / Lee, Kimoon; Kim, Ki Tae; Choi, Jeong M.; Oh, Min Suk; Hwang, D. K.; Jang, Sungjin; Kim, Eugene; Im, Seongil.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 13, 135102, 07.07.2008.

Research output: Contribution to journal › Article › peer-review

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AU - Lee, Kimoon

AU - Kim, Ki Tae

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AU - Hwang, D. K.

AU - Jang, Sungjin

AU - Kim, Eugene

AU - Im, Seongil

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