Abstract
We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.
| Original language | English |
|---|---|
| Title of host publication | 21st International Display Workshops 2014, IDW 2014 |
| Publisher | Society for Information Display |
| Pages | 198-201 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510827790 |
| Publication status | Published - 2014 |
| Event | 21st International Display Workshops 2014, IDW 2014 - Niigata, Japan Duration: 2014 Dec 3 → 2014 Dec 5 |
Publication series
| Name | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Volume | 1 |
Conference
| Conference | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 14/12/3 → 14/12/5 |
Bibliographical note
Publisher Copyright:© 2014 ITE and SID.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering