Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors.

Young Jun Tak, Sung Pyo Park, Heesoo Lee, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages198-201
Number of pages4
ISBN (Electronic)9781510827790
Publication statusPublished - 2014 Jan 1
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 2014 Dec 32014 Dec 5

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Conference

Conference21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period14/12/314/12/5

Fingerprint

Oxygen vacancies
Thin film transistors
Passivation
Oxides
Metals
Heat treatment
Annealing
Defects

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tak, Y. J., Park, S. P., Lee, H., & Kim, H. J. (2014). Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. In 21st International Display Workshops 2014, IDW 2014 (pp. 198-201). (21st International Display Workshops 2014, IDW 2014; Vol. 1). Society for Information Display.
Tak, Young Jun ; Park, Sung Pyo ; Lee, Heesoo ; Kim, Hyun Jae. / Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. 21st International Display Workshops 2014, IDW 2014. Society for Information Display, 2014. pp. 198-201 (21st International Display Workshops 2014, IDW 2014).
@inproceedings{b85d06a63f5c49f6b6f1cab271c21241,
title = "Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors.",
abstract = "We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.",
author = "Tak, {Young Jun} and Park, {Sung Pyo} and Heesoo Lee and Kim, {Hyun Jae}",
year = "2014",
month = "1",
day = "1",
language = "English",
series = "21st International Display Workshops 2014, IDW 2014",
publisher = "Society for Information Display",
pages = "198--201",
booktitle = "21st International Display Workshops 2014, IDW 2014",
address = "United States",

}

Tak, YJ, Park, SP, Lee, H & Kim, HJ 2014, Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. in 21st International Display Workshops 2014, IDW 2014. 21st International Display Workshops 2014, IDW 2014, vol. 1, Society for Information Display, pp. 198-201, 21st International Display Workshops 2014, IDW 2014, Niigata, Japan, 14/12/3.

Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. / Tak, Young Jun; Park, Sung Pyo; Lee, Heesoo; Kim, Hyun Jae.

21st International Display Workshops 2014, IDW 2014. Society for Information Display, 2014. p. 198-201 (21st International Display Workshops 2014, IDW 2014; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors.

AU - Tak, Young Jun

AU - Park, Sung Pyo

AU - Lee, Heesoo

AU - Kim, Hyun Jae

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.

AB - We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.

UR - http://www.scopus.com/inward/record.url?scp=85050543511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050543511&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85050543511

T3 - 21st International Display Workshops 2014, IDW 2014

SP - 198

EP - 201

BT - 21st International Display Workshops 2014, IDW 2014

PB - Society for Information Display

ER -

Tak YJ, Park SP, Lee H, Kim HJ. Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. In 21st International Display Workshops 2014, IDW 2014. Society for Information Display. 2014. p. 198-201. (21st International Display Workshops 2014, IDW 2014).