Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors.

Young Jun Tak, Sung Pyo Park, Heesoo Lee, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have demonstrated various post treatments including high pressure annealing, simultaneous UV and thermal treatment, and doped passivation layer. These treatments have been performed to improve stabilities and electrical characteristics on sputtered In-Ga-Zn-O thin film transistors by reducing defect sites related to oxygen vacancies and increasing metal oxide bonds.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages198-201
Number of pages4
ISBN (Electronic)9781510827790
Publication statusPublished - 2014 Jan 1
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 2014 Dec 32014 Dec 5

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Conference

Conference21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period14/12/314/12/5

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tak, Y. J., Park, S. P., Lee, H., & Kim, H. J. (2014). Improved electrical characteristics and stability using various post treatments on sputtered In-Ga-Zn-O thin-film transistors. In 21st International Display Workshops 2014, IDW 2014 (pp. 198-201). (21st International Display Workshops 2014, IDW 2014; Vol. 1). Society for Information Display.