Improved electrical characteristics of Ge-on-Si field-effect transistors with controlled Ge epitaxial layer thickness on Si substrates

Jungwoo Oh, Prashant Majhi, Hideok Lee, Oooksang Yoo, Sanjay Banerjee, Chang Yong Kang, Ji Woon Yang, Rusty Harris, Hsing Huang Tseng, Raj Jammy

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