Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process

Deuk Jong Kim, Dong Lim Kim, You Seung Rim, Chul Ho Kim, Woong Hee Jeong, Hyun Soo Lim, Hyun Jae Kim

Research output: Contribution to journalArticle

58 Citations (Scopus)


Thin-film transistors (TFTs) with multistacked active layers (MSALs) have been studied to improve their electrical performance. The performance enhancement with MSALs has been attributed to higher film density in the effective channel; the density was higher because the porosities of the sublayers were reduced by filling with solution. The proposed TFT with MSALs exhibited an enhanced field-effect mobility of 2.17 cm 2/(V s) and a threshold voltage shift under positive bias stress of 8.2 V, compared to 1.21 cm 2/(V s) and 18.1 V, respectively, for the single active layer TFT.

Original languageEnglish
Pages (from-to)4001-4005
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number8
Publication statusPublished - 2012 Aug 22


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this