Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process

Deuk Jong Kim, Dong Lim Kim, You Seung Rim, Chul Ho Kim, Woong Hee Jeong, Hyun Soo Lim, Hyun Jae Kim

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with multistacked active layers (MSALs) have been studied to improve their electrical performance. The performance enhancement with MSALs has been attributed to higher film density in the effective channel; the density was higher because the porosities of the sublayers were reduced by filling with solution. The proposed TFT with MSALs exhibited an enhanced field-effect mobility of 2.17 cm 2/(V s) and a threshold voltage shift under positive bias stress of 8.2 V, compared to 1.21 cm 2/(V s) and 18.1 V, respectively, for the single active layer TFT.

Original languageEnglish
Pages (from-to)4001-4005
Number of pages5
JournalACS Applied Materials and Interfaces
Volume4
Issue number8
DOIs
Publication statusPublished - 2012 Aug 22

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Thin film transistors
Oxide films
Threshold voltage
Density (specific gravity)
Porosity

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kim, Deuk Jong ; Kim, Dong Lim ; Rim, You Seung ; Kim, Chul Ho ; Jeong, Woong Hee ; Lim, Hyun Soo ; Kim, Hyun Jae. / Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process. In: ACS Applied Materials and Interfaces. 2012 ; Vol. 4, No. 8. pp. 4001-4005.
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Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process. / Kim, Deuk Jong; Kim, Dong Lim; Rim, You Seung; Kim, Chul Ho; Jeong, Woong Hee; Lim, Hyun Soo; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 4, No. 8, 22.08.2012, p. 4001-4005.

Research output: Contribution to journalArticle

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