Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

Gun Hwan Kim; Jong Ho Lee; Jun Yeong Seok; Seul Ji Song; Jung Ho Yoon; Kyung Jean Yoon; Min Hwan Lee; Kyung Min Kim; Hyung Dong Lee; Seung Wook Ryu; Tae Joo Park; Cheol Seong Hwang

doi:10.1063/1.3600784

Improved endurance of resistive switching TiO₂ thin film by hourglass shaped Magnéli filaments

Gun Hwan Kim, Jong Ho Lee, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Kyung Min Kim, Hyung Dong Lee, Seung Wook Ryu, Tae Joo Park, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO₂/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO₂ film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.

Original language	English
Article number	262901
Journal	Applied Physics Letters
Volume	98
Issue number	26
DOIs	https://doi.org/10.1063/1.3600784
Publication status	Published - 2011 Jun 27

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3600784

Cite this

@article{f8733df74b194e8ebb8b0623cf316fc0,

title = "Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magn{\'e}li filaments",

abstract = "A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.",

author = "Kim, {Gun Hwan} and {Ho Lee}, Jong and {Yeong Seok}, Jun and {Ji Song}, Seul and {Ho Yoon}, Jung and {Jean Yoon}, Kyung and {Hwan Lee}, Min and {Min Kim}, Kyung and {Dong Lee}, Hyung and {Wook Ryu}, Seung and {Joo Park}, Tae and {Seong Hwang}, Cheol",

note = "Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).",

year = "2011",

month = jun,

day = "27",

doi = "10.1063/1.3600784",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

AU - Kim, Gun Hwan

AU - Ho Lee, Jong

AU - Yeong Seok, Jun

AU - Ji Song, Seul

AU - Ho Yoon, Jung

AU - Jean Yoon, Kyung

AU - Hwan Lee, Min

AU - Min Kim, Kyung

AU - Dong Lee, Hyung

AU - Wook Ryu, Seung

AU - Joo Park, Tae

AU - Seong Hwang, Cheol

N1 - Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (Grant No. 2010K000977), and World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R31-2008-000-10075-0).

PY - 2011/6/27

Y1 - 2011/6/27

N2 - A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.

AB - A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.

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