Improved Ge surface passivation with ultrathin SiOX enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Sachin Joshi, Cristiano Krug, Dawei Heh, Hoon Joo Na, Harlan R. Harris, Jung Woo Oh, Paul D. Kirsch, Prashant Majhi, Byoung Hun Lee, Hsing Huang Tseng, Raj Jammy, Jack C. Lee, Sanjay K. Banerjee

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34 Citations (Scopus)

Abstract

To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOx passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial Si deposition followed by selective oxidation and leads to one of the highest peak hole mobilities reported for unstrained surface channel pMOSFETs on Ge: 332cm2 · V-1 · s-1 at 0.05 MV/cm - a 2× enhancement over the universal Si/SiO2 mobility. The devices show well-behaved output and transfer characteristics, an equivalent oxide thickness of 1.85 nm and an ION/IOFF ratio of 3 × 103 without detectable fast transient charging. The high hole mobility of these devices is attributed to adequate passivation of the Ge surface.

Original languageEnglish
Pages (from-to)308-311
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number4
DOIs
Publication statusPublished - 2007 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Joshi, S., Krug, C., Heh, D., Na, H. J., Harris, H. R., Oh, J. W., Kirsch, P. D., Majhi, P., Lee, B. H., Tseng, H. H., Jammy, R., Lee, J. C., & Banerjee, S. K. (2007). Improved Ge surface passivation with ultrathin SiOX enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack. IEEE Electron Device Letters, 28(4), 308-311. https://doi.org/10.1109/LED.2007.893274