Improved Ge surface passivation with ultrathin SiOX enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack

Sachin Joshi, Cristiano Krug, Dawei Heh, Hoon Joo Na, Harlan R. Harris, Jung Woo Oh, Paul D. Kirsch, Prashant Majhi, Byoung Hun Lee, Hsing Huang Tseng, Raj Jammy, Jack C. Lee, Sanjay K. Banerjee

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

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