Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment

Jaehyun Yang, Sunkook Kim, Woong Choi, Sang Han Park, Youngkwon Jung, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

137 Citations (Scopus)


We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al 2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino) hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

Original languageEnglish
Pages (from-to)4739-4744
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number11
Publication statusPublished - 2013 Jun 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


Dive into the research topics of 'Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS<sub>2</sub> by oxygen plasma pretreatment'. Together they form a unique fingerprint.

Cite this