Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment

Jaehyun Yang, Sunkook Kim, Woong Choi, Sang Han Park, Youngkwon Jung, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al 2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino) hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

Original languageEnglish
Pages (from-to)4739-4744
Number of pages6
JournalACS Applied Materials and Interfaces
Volume5
Issue number11
DOIs
Publication statusPublished - 2013 Jun 12

Fingerprint

Atomic layer deposition
Multilayers
Hafnium
Oxygen
Plasmas
Thin film transistors
Oxidants
Oxides
Surface treatment
Metals
Thin films
Crystals
Water
Temperature
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yang, Jaehyun ; Kim, Sunkook ; Choi, Woong ; Park, Sang Han ; Jung, Youngkwon ; Cho, Mann Ho ; Kim, Hyoungsub. / Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 11. pp. 4739-4744.
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Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. / Yang, Jaehyun; Kim, Sunkook; Choi, Woong; Park, Sang Han; Jung, Youngkwon; Cho, Mann Ho; Kim, Hyoungsub.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 11, 12.06.2013, p. 4739-4744.

Research output: Contribution to journalArticle

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AB - We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al 2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino) hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

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