Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes

Jae Hwan Lee; Bo Eun Park; David Thompson; Myeonggi Choe; Zonghoon Lee; Il Kwon Oh; Woo Hee Kim; Hyungjun Kim

doi:10.1016/j.tsf.2020.137950

Improved interface quality of atomic-layer-deposited ZrO₂ metal-insulator-metal capacitors with Ru bottom electrodes

Jae Hwan Lee, Bo Eun Park, David Thompson, Myeonggi Choe, Zonghoon Lee, Il Kwon Oh, Woo Hee Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigate effects of bottom electrodes on ZrO₂ thin films formed through atomic layer deposition (ALD). We focus on the correlation between interfacial layer formation and electrical properties. For this comparative study, two different bottom electrodes consisting of TiN and Ru were employed. ALD ZrO₂ films are deposited on these bottom electrodes by using tris(dimethylamino)cyclopentadielnyl zirconium ((C₅H₅)Zr[N(CH₃)₂]₃) and ozone as a precursor and oxidant, respectively. Based on detailed investigations using transmission electron microscopy and X-ray photoelectron spectroscopy, we are able to comparatively characterize the formations and chemical compositions of the interfacial layers between ALD ZrO₂ and both bottom electrodes. Based on the electrical properties of metal-insulator-metal capacitors fabricated using both the TiN and Ru bottom electrodes, we observe improved capacitance-voltage and current-voltage characteristics with the Ru bottom electrode, which are attributed to the suppressed formation of an interfacial layer. We also discuss the correlation between traps in the interfacial layer and electrical properties.

Original language	English
Article number	137950
Journal	Thin Solid Films
Volume	701
DOIs	https://doi.org/10.1016/j.tsf.2020.137950
Publication status	Published - 2020 May 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Nos. NRF-2018R1A2B6005289 and NRF-2017R1C1B5076821 ). This research was supported by the MOTIE ( Ministry of Trade, Industry & Energy , No. 20006504 and No. 20007000 ) and KSRC ( Korea Semiconductor Research Consortium ) support program for the development of the future semiconductor device. Following are results of a study on the "Leaders in Industry-university Cooperation +" Project, supported by the Ministry of Education and National Research Foundation of Korea . This work was also supported by Air Liquide as a precursor supplier.

Publisher Copyright:
© 2020 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2020.137950

Cite this

@article{2c639cd087584c72bb75281bcf5d84bf,

title = "Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes",

abstract = "We investigate effects of bottom electrodes on ZrO2 thin films formed through atomic layer deposition (ALD). We focus on the correlation between interfacial layer formation and electrical properties. For this comparative study, two different bottom electrodes consisting of TiN and Ru were employed. ALD ZrO2 films are deposited on these bottom electrodes by using tris(dimethylamino)cyclopentadielnyl zirconium ((C5H5)Zr[N(CH3)2]3) and ozone as a precursor and oxidant, respectively. Based on detailed investigations using transmission electron microscopy and X-ray photoelectron spectroscopy, we are able to comparatively characterize the formations and chemical compositions of the interfacial layers between ALD ZrO2 and both bottom electrodes. Based on the electrical properties of metal-insulator-metal capacitors fabricated using both the TiN and Ru bottom electrodes, we observe improved capacitance-voltage and current-voltage characteristics with the Ru bottom electrode, which are attributed to the suppressed formation of an interfacial layer. We also discuss the correlation between traps in the interfacial layer and electrical properties.",

author = "Lee, {Jae Hwan} and Park, {Bo Eun} and David Thompson and Myeonggi Choe and Zonghoon Lee and Oh, {Il Kwon} and Kim, {Woo Hee} and Hyungjun Kim",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Nos. NRF-2018R1A2B6005289 and NRF-2017R1C1B5076821 ). This research was supported by the MOTIE ( Ministry of Trade, Industry & Energy , No. 20006504 and No. 20007000 ) and KSRC ( Korea Semiconductor Research Consortium ) support program for the development of the future semiconductor device. Following are results of a study on the {"}Leaders in Industry-university Cooperation +{"} Project, supported by the Ministry of Education and National Research Foundation of Korea . This work was also supported by Air Liquide as a precursor supplier. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = may,

day = "1",

doi = "10.1016/j.tsf.2020.137950",

language = "English",

volume = "701",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes

AU - Lee, Jae Hwan

AU - Park, Bo Eun

AU - Thompson, David

AU - Choe, Myeonggi

AU - Lee, Zonghoon

AU - Oh, Il Kwon

AU - Kim, Woo Hee

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Nos. NRF-2018R1A2B6005289 and NRF-2017R1C1B5076821 ). This research was supported by the MOTIE ( Ministry of Trade, Industry & Energy , No. 20006504 and No. 20007000 ) and KSRC ( Korea Semiconductor Research Consortium ) support program for the development of the future semiconductor device. Following are results of a study on the "Leaders in Industry-university Cooperation +" Project, supported by the Ministry of Education and National Research Foundation of Korea . This work was also supported by Air Liquide as a precursor supplier. Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/5/1

Y1 - 2020/5/1

N2 - We investigate effects of bottom electrodes on ZrO2 thin films formed through atomic layer deposition (ALD). We focus on the correlation between interfacial layer formation and electrical properties. For this comparative study, two different bottom electrodes consisting of TiN and Ru were employed. ALD ZrO2 films are deposited on these bottom electrodes by using tris(dimethylamino)cyclopentadielnyl zirconium ((C5H5)Zr[N(CH3)2]3) and ozone as a precursor and oxidant, respectively. Based on detailed investigations using transmission electron microscopy and X-ray photoelectron spectroscopy, we are able to comparatively characterize the formations and chemical compositions of the interfacial layers between ALD ZrO2 and both bottom electrodes. Based on the electrical properties of metal-insulator-metal capacitors fabricated using both the TiN and Ru bottom electrodes, we observe improved capacitance-voltage and current-voltage characteristics with the Ru bottom electrode, which are attributed to the suppressed formation of an interfacial layer. We also discuss the correlation between traps in the interfacial layer and electrical properties.

AB - We investigate effects of bottom electrodes on ZrO2 thin films formed through atomic layer deposition (ALD). We focus on the correlation between interfacial layer formation and electrical properties. For this comparative study, two different bottom electrodes consisting of TiN and Ru were employed. ALD ZrO2 films are deposited on these bottom electrodes by using tris(dimethylamino)cyclopentadielnyl zirconium ((C5H5)Zr[N(CH3)2]3) and ozone as a precursor and oxidant, respectively. Based on detailed investigations using transmission electron microscopy and X-ray photoelectron spectroscopy, we are able to comparatively characterize the formations and chemical compositions of the interfacial layers between ALD ZrO2 and both bottom electrodes. Based on the electrical properties of metal-insulator-metal capacitors fabricated using both the TiN and Ru bottom electrodes, we observe improved capacitance-voltage and current-voltage characteristics with the Ru bottom electrode, which are attributed to the suppressed formation of an interfacial layer. We also discuss the correlation between traps in the interfacial layer and electrical properties.

UR - http://www.scopus.com/inward/record.url?scp=85083577321&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083577321&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2020.137950

DO - 10.1016/j.tsf.2020.137950

M3 - Article

AN - SCOPUS:85083577321

SN - 0040-6090

VL - 701

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 137950

ER -