Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

Jun Kyu Yang, Hyung Ho Park, Haecheon Kim, Ho Won Jang, Jong Lam Lee, Seongil Im

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

Original languageEnglish
Pages (from-to)626-631
Number of pages6
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

sulfidation
Leakage currents
leakage
field effect transistors
MESFET devices
Photoelectron spectroscopy
Metallizing
Synchrotron radiation
Threshold voltage
Sulfur
Passivation
threshold voltage
Oxides
passivity
electric contacts
synchrotron radiation
Electric properties
sulfur
photoelectric emission
electrical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Yang, Jun Kyu ; Park, Hyung Ho ; Kim, Haecheon ; Jang, Ho Won ; Lee, Jong Lam ; Im, Seongil. / Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 626-631.
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Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface. / Yang, Jun Kyu; Park, Hyung Ho; Kim, Haecheon; Jang, Ho Won; Lee, Jong Lam; Im, Seongil.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 626-631.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improved performance of GaAs MESFETs through sulfidation of Pt/GaAs interface

AU - Yang, Jun Kyu

AU - Park, Hyung Ho

AU - Kim, Haecheon

AU - Jang, Ho Won

AU - Lee, Jong Lam

AU - Im, Seongil

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

AB - Sulfidation was employed to decrease defective interfacial states of Pt/GaAs Schottky contacts. With nondestructive analysis using synchrotron radiation photoemission spectroscopy, it was found that the sulfur passivation of GaAs surface prior to Pt metallization effectively reduces interfacial elemental As and As-oxides. A reduced reverse leakage current as well as enhanced barrier height was confirmed from measurements of Schottky properties. These processes were introduced to a gate junction to improve gate leakage current characteristics and pinch-off properties of GaAs metal-semiconductor field effect transistors. The leakage current was decreased by several times and the threshold voltage was lowered by the sulfidation. The results indicate that the improved device properties after the sulfidation originate in the suppression of donor-type defect like excess As at the interface. On the basis of interfacial bonding characteristics, the electrical properties could be well understood.

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