Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process

Yeon Hwa Jo, Jin Woo Jang, Bhaskar Chandra Mohanty, Han Byul Kang, Yong Soo Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21% with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.

Original languageEnglish
Article number245103
JournalJournal of Physics D: Applied Physics
Volume48
Issue number24
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

Grain boundaries
grain boundaries
Thin films
Optical band gaps
Open circuit voltage
thin films
open circuit voltage
Excitons
Conversion efficiency
Sputtering
absorbers
solar cells
sputtering
adjusting
excitons
Annealing
microstructure
Microstructure
annealing
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

@article{af5f000d3c4746838a7d9b7854a4b96e,
title = "Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process",
abstract = "A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21{\%} with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.",
author = "Jo, {Yeon Hwa} and Jang, {Jin Woo} and Mohanty, {Bhaskar Chandra} and Kang, {Han Byul} and Cho, {Yong Soo}",
year = "2015",
month = "1",
day = "1",
doi = "10.1088/0022-3727/48/24/245103",
language = "English",
volume = "48",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "24",

}

Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process. / Jo, Yeon Hwa; Jang, Jin Woo; Mohanty, Bhaskar Chandra; Kang, Han Byul; Cho, Yong Soo.

In: Journal of Physics D: Applied Physics, Vol. 48, No. 24, 245103, 01.01.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process

AU - Jo, Yeon Hwa

AU - Jang, Jin Woo

AU - Mohanty, Bhaskar Chandra

AU - Kang, Han Byul

AU - Cho, Yong Soo

PY - 2015/1/1

Y1 - 2015/1/1

N2 - A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21% with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.

AB - A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21% with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.

UR - http://www.scopus.com/inward/record.url?scp=84982815598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982815598&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/48/24/245103

DO - 10.1088/0022-3727/48/24/245103

M3 - Article

AN - SCOPUS:84982815598

VL - 48

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 24

M1 - 245103

ER -