Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process

Yeon Hwa Jo, Jin Woo Jang, Bhaskar Chandra Mohanty, Han Byul Kang, Yong Soo Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21% with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.

Original languageEnglish
Article number245103
JournalJournal of Physics D: Applied Physics
Volume48
Issue number24
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu<sub>2</sub> ZnSnSe<sub>4</sub> thin films by post sulfurization/selenization process'. Together they form a unique fingerprint.

  • Cite this