Improved photovoltaic and grain boundary characteristics of single elementary target-sputtered Cu2 ZnSnSe4 thin films by post sulfurization/selenization process

Yeon Hwa Jo, Jin Woo Jang, Bhaskar Chandra Mohanty, Han Byul Kang, Yong Soo Cho

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A potential way to improve the quality of Cu2ZnSnSe 4 absorber thin film by a one step process of sputtering using a single elementary target is proposed for thin film solar cells. As critical parameters, different S/Se ratios and grain boundary characteristics are achieved by adjusting sequential sulfurization and selenization post-treatment. The simple sulfurization of as-deposited film at 530 ° C in H2S is not effective in raising the performance but the additional Se annealing at a shorter duration of 5 min improves conversion efficiency from 0.12 to 3.21% with a drastic increase of the open circuit voltage. Positively-charged grain boundaries with narrow potential peaks seem to play a critical role for effective exciton separation and higher efficiency. The improvement is also understood as related to well-defined microstructures and the variable optical band gap.

Original languageEnglish
Article number245103
JournalJournal of Physics D: Applied Physics
Issue number24
Publication statusPublished - 2015

Bibliographical note

Funding Information:
This work was financially supported by a grant of the National Research Foundation of Korea (2011-0020285).

Publisher Copyright:
© 2015 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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