Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

Sunil Babu Eadi; Hyeong Sub Song; Hyun dong Song; Jungwoo Oh; Hi Deok Lee

doi:10.1016/j.mee.2019.111153

Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

Sunil Babu Eadi, Hyeong Sub Song, Hyun dong Song, Jungwoo Oh, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF₂-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρ_c) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρ_c, that is, from 9.84 × 10⁻⁵ Ω cm² to 1.16 × 10⁻⁵ Ω·cm² for n-Si and 6.24 × 10⁻⁵ Ω·cm² to 1.84 × 10⁻⁵ Ω·cm² for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρ_c reduction.

Original language	English
Article number	111153
Journal	Microelectronic Engineering
Volume	219
DOIs	https://doi.org/10.1016/j.mee.2019.111153
Publication status	Published - 2020 Jan 15

Bibliographical note

Funding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy ( 10048536 ) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning . ( 2009-0082580 ).

Funding Information:
This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano?Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580).

Publisher Copyright:
© 2019 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2019.111153

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title = "Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer",

abstract = "In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.",

author = "Eadi, {Sunil Babu} and Song, {Hyeong Sub} and Song, {Hyun dong} and Jungwoo Oh and Lee, {Hi Deok}",

note = "Funding Information: This research was supported by the MOTIE (Ministry of Trade, Industry & Energy ( 10048536 ) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning . ( 2009-0082580 ). Funding Information: This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano?Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580). Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

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AU - Eadi, Sunil Babu

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AU - Lee, Hi Deok

N1 - Funding Information: This research was supported by the MOTIE (Ministry of Trade, Industry & Energy ( 10048536 ) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning . ( 2009-0082580 ). Funding Information: This research was supported by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by Nano?Material Technology Development Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580). Publisher Copyright: © 2019 Elsevier B.V.

PY - 2020/1/15

Y1 - 2020/1/15

N2 - In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.

AB - In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.

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Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

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