Abstract
In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.
| Original language | English |
|---|---|
| Article number | 111153 |
| Journal | Microelectronic Engineering |
| Volume | 219 |
| DOIs | |
| Publication status | Published - 2020 Jan 15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer. / Eadi, Sunil Babu; Song, Hyeong Sub; Song, Hyun dong; Oh, Jungwoo; Lee, Hi Deok.
In: Microelectronic Engineering, Vol. 219, 111153, 15.01.2020.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer
AU - Eadi, Sunil Babu
AU - Song, Hyeong Sub
AU - Song, Hyun dong
AU - Oh, Jungwoo
AU - Lee, Hi Deok
PY - 2020/1/15
Y1 - 2020/1/15
N2 - In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.
AB - In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.
UR - http://www.scopus.com/inward/record.url?scp=85074088599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85074088599&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2019.111153
DO - 10.1016/j.mee.2019.111153
M3 - Article
AN - SCOPUS:85074088599
VL - 219
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
M1 - 111153
ER -