Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer

Sunil Babu Eadi, Hyeong Sub Song, Hyun dong Song, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.

Original languageEnglish
Article number111153
JournalMicroelectronic Engineering
Volume219
DOIs
Publication statusPublished - 2020 Jan 15

Fingerprint

Holmium
holmium
Contact resistance
contact resistance
interlayers
Nickel
nickel
thick films
Rapid thermal annealing
Silicon
Thick films
electric contacts
electrical resistivity
annealing
nickel silicide
silicon
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Eadi, Sunil Babu ; Song, Hyeong Sub ; Song, Hyun dong ; Oh, Jungwoo ; Lee, Hi Deok. / Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer. In: Microelectronic Engineering. 2020 ; Vol. 219.
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Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer. / Eadi, Sunil Babu; Song, Hyeong Sub; Song, Hyun dong; Oh, Jungwoo; Lee, Hi Deok.

In: Microelectronic Engineering, Vol. 219, 111153, 15.01.2020.

Research output: Contribution to journalArticle

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AU - Eadi, Sunil Babu

AU - Song, Hyeong Sub

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AU - Oh, Jungwoo

AU - Lee, Hi Deok

PY - 2020/1/15

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AB - In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickness of 5 nm Ho layer was first deposited on As-doped n-type Si layer and BF2-doped p-type Si layer, followed by in situ deposition of a 15 nm-thick Ni film and 10 nm-thick TiN film. After the formation of the NiSi by rapid thermal annealing (RTA) at 450 °C for 30 s, specific contact resistivity (ρc) between Ni-silicide and doped silicon region is extracted. There is a great reduction of the ρc, that is, from 9.84 × 10−5 Ω cm2 to 1.16 × 10−5 Ω·cm2 for n-Si and 6.24 × 10−5 Ω·cm2 to 1.84 × 10−5 Ω·cm2 for p-Si substrates, respectively. The improved interface morphology by introducing of Ho interlayer could be responsible for the ρc reduction.

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