Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs

Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae Hong Ko, Yongshik Lee, Mann Ho Cho, Jungwoo Oh

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.

Original languageEnglish
Article number142112
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2010 Apr 27

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thermal stability
oxides
metal oxide semiconductors
x ray spectroscopy
capacitors
capacitance
hysteresis
traps
photoelectron spectroscopy
crystallization
transmission electron microscopy
electric potential
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.",
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Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs. / Suh, Dong Chan; Cho, Young Dae; Kim, Sun Wook; Ko, Dae Hong; Lee, Yongshik; Cho, Mann Ho; Oh, Jungwoo.

In: Applied Physics Letters, Vol. 96, No. 14, 142112, 27.04.2010.

Research output: Contribution to journalArticle

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AU - Suh, Dong Chan

AU - Cho, Young Dae

AU - Kim, Sun Wook

AU - Ko, Dae Hong

AU - Lee, Yongshik

AU - Cho, Mann Ho

AU - Oh, Jungwoo

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AB - Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.

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