Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs

Dong Chan Suh; Young Dae Cho; Sun Wook Kim; Dae Hong Ko; Yongshik Lee; Mann Ho Cho; Jungwoo Oh

doi:10.1063/1.3377915

Improved thermal stability of Al₂ O₃ / HfO ₂ / Al₂ O₃ high-k gate dielectric stack on GaAs

Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae Hong Ko, Yongshik Lee, Mann Ho Cho, Jungwoo Oh

Research output: Contribution to journal › Article

46 Citations (Scopus)

Abstract

Thermal stability of HfO₂ high-k gate dielectric on GaAs is investigated. Compared to HfO₂ gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al₂ O₃ / HfO₂ / Al₂ O₃ dielectric stack. At elevated temperatures, the amorphous Al₂ O₃ layers were effective in inhibiting crystallization of HfO₂. Since the passivating Al₂ O ₃ layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al₂ O₃ / HfO₂ / Al₂ O₃ gate dielectric stack.

Original language	English
Article number	142112
Journal	Applied Physics Letters
Volume	96
Issue number	14
DOIs	https://doi.org/10.1063/1.3377915
Publication status	Published - 2010 Apr 27

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Suh, D. C., Cho, Y. D., Kim, S. W., Ko, D. H., Lee, Y., Cho, M. H., & Oh, J. (2010). Improved thermal stability of Al₂ O₃ / HfO ₂ / Al₂ O₃ high-k gate dielectric stack on GaAs. Applied Physics Letters, 96(14), [142112]. https://doi.org/10.1063/1.3377915

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abstract = "Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.",

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