Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs

Dong Chan Suh; Young Dae Cho; Sun Wook Kim; Dae Hong Ko; Yongshik Lee; Mann Ho Cho; Jungwoo Oh

doi:10.1063/1.3377915

Improved thermal stability of Al₂ O₃ / HfO ₂ / Al₂ O₃ high-k gate dielectric stack on GaAs

Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae Hong Ko, Yongshik Lee, Mann Ho Cho, Jungwoo Oh

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Thermal stability of HfO₂ high-k gate dielectric on GaAs is investigated. Compared to HfO₂ gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al₂ O₃ / HfO₂ / Al₂ O₃ dielectric stack. At elevated temperatures, the amorphous Al₂ O₃ layers were effective in inhibiting crystallization of HfO₂. Since the passivating Al₂ O ₃ layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al₂ O₃ / HfO₂ / Al₂ O₃ gate dielectric stack.

Original language	English
Article number	142112
Journal	Applied Physics Letters
Volume	96
Issue number	14
DOIs	https://doi.org/10.1063/1.3377915
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was financially supported by a grant from the “Next-generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of the Ministry of Knowledge Economy (MKE) of Korea and the Joint Program for Samsung Electronics–Yonsei University.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs",

abstract = "Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.",

author = "Suh, {Dong Chan} and Cho, {Young Dae} and Kim, {Sun Wook} and Ko, {Dae Hong} and Yongshik Lee and Cho, {Mann Ho} and Jungwoo Oh",

note = "Funding Information: This work was financially supported by a grant from the “Next-generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of the Ministry of Knowledge Economy (MKE) of Korea and the Joint Program for Samsung Electronics–Yonsei University.",

year = "2010",

doi = "10.1063/1.3377915",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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AU - Suh, Dong Chan

AU - Cho, Young Dae

AU - Kim, Sun Wook

AU - Ko, Dae Hong

AU - Lee, Yongshik

AU - Cho, Mann Ho

AU - Oh, Jungwoo

N1 - Funding Information: This work was financially supported by a grant from the “Next-generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of the Ministry of Knowledge Economy (MKE) of Korea and the Joint Program for Samsung Electronics–Yonsei University.

PY - 2010

Y1 - 2010

N2 - Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.

AB - Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.

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