Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs

Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae Hong Ko, Yongshik Lee, Mann Ho Cho, Jungwoo Oh

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.

Original languageEnglish
Article number142112
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2010 Apr 27

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Improved thermal stability of Al<sub>2</sub> O<sub>3</sub> / HfO <sub>2</sub> / Al<sub>2</sub> O<sub>3</sub> high-k gate dielectric stack on GaAs'. Together they form a unique fingerprint.

  • Cite this