Abstract
Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.
| Original language | English |
|---|---|
| Article number | 142112 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2010 Apr 27 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs. / Suh, Dong Chan; Cho, Young Dae; Kim, Sun Wook; Ko, Dae Hong; Lee, Yongshik; Cho, Mann Ho; Oh, Jungwoo.
In: Applied Physics Letters, Vol. 96, No. 14, 142112, 27.04.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs
AU - Suh, Dong Chan
AU - Cho, Young Dae
AU - Kim, Sun Wook
AU - Ko, Dae Hong
AU - Lee, Yongshik
AU - Cho, Mann Ho
AU - Oh, Jungwoo
PY - 2010/4/27
Y1 - 2010/4/27
N2 - Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.
AB - Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2 O3 / HfO2 / Al2 O3 dielectric stack. At elevated temperatures, the amorphous Al2 O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2 O 3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2 O3 / HfO2 / Al2 O3 gate dielectric stack.
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U2 - 10.1063/1.3377915
DO - 10.1063/1.3377915
M3 - Article
AN - SCOPUS:77951198414
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142112
ER -