The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Issue number||1 SPEC.|
|Publication status||Published - 2003 Jan|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering