Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Gi Bum Kim, Do Joon Yoo, Hong Koo Baik, Jae Min Myoung, Sung Man Lee, Sang Ho Oh, Chan Gyung Park

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
Publication statusPublished - 2003 Jan

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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