Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Gi Bum Kim, Do Joon Yoo, Hong Koo Baik, Jae Min Myoung, Sung Man Lee, Sang Ho Oh, Chan Gyung Park

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.

Original languageEnglish
Pages (from-to)319-322
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
Publication statusPublished - 2003 Jan 1

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Epitaxial films
Thermodynamic stability
thermal stability
Metals
metals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni",
abstract = "The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi2 film and double layer structure in the as-deposited state.",
author = "Kim, {Gi Bum} and Yoo, {Do Joon} and Baik, {Hong Koo} and Myoung, {Jae Min} and Lee, {Sung Man} and Oh, {Sang Ho} and Park, {Chan Gyung}",
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issn = "1071-1023",
publisher = "AVS Science and Technology Society",
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Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni. / Kim, Gi Bum; Yoo, Do Joon; Baik, Hong Koo; Myoung, Jae Min; Lee, Sung Man; Oh, Sang Ho; Park, Chan Gyung.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 1 SPEC., 01.01.2003, p. 319-322.

Research output: Contribution to journalArticle

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AU - Kim, Gi Bum

AU - Yoo, Do Joon

AU - Baik, Hong Koo

AU - Myoung, Jae Min

AU - Lee, Sung Man

AU - Oh, Sang Ho

AU - Park, Chan Gyung

PY - 2003/1/1

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JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

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