Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10-6 Ω-cm2. The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering