Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts

Joon Seop Kwak, Joog Lam Lee, Hong Koo Baik

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Improved contact resistance uniformity, with a low resistance on high-low doped GaAs MESFET, was demonstrated using a Pd/Ge/Ti/Au ohmic contact. The lowest contact resistivity obtained was 2.8 × 10-6 Ω-cm2. The average value and standard deviation (ΔRc) of the contact resistance (Rc) were 0.73 and 0.07 Ω-mm, respectively, which were more uniform than those for AuGe/Ni contacts with an average Rc of 0.77 Ω-mm and ΔRc of 0.16 Ω-mm. The improved uniformity was attributed to the uniform penetration of the the ohmic junction into the buried high-doped channel layer by solid-state reactions, resulting in the improved uniformity of device performance.

Original languageEnglish
Pages (from-to)481-483
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number12
DOIs
Publication statusPublished - 1998 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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