Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

Jun Ki Kang, Sung Pyo Park, Jae Won Na, Jin Hyeok Lee, Dongwoo Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO2) surface reacts with H2O under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH•). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low-temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm2/V·s for IGZO TFTs and from 2.78 to 7.82 cm2/V·s for IZO TFTs, and the Vth shift caused by positive bias stress and negative bias illumination stress over 1000 s under 5700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO2 has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO2 recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.

Original languageEnglish
Pages (from-to)18837-18844
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number22
DOIs
Publication statusPublished - 2018 Jun 6

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Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Oxide films
Hydroxyl Radical
Titanium dioxide
Oxides
Irradiation
Molar mass
Boiling point
Organic compounds
Molecular structure
Recycling
Electric properties
Lighting
Metals
Decomposition
Defects
titanium dioxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kang, Jun Ki ; Park, Sung Pyo ; Na, Jae Won ; Lee, Jin Hyeok ; Kim, Dongwoo ; Kim, Hyun Jae. / Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 22. pp. 18837-18844.
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abstract = "Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO2) surface reacts with H2O under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH•). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low-temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm2/V·s for IGZO TFTs and from 2.78 to 7.82 cm2/V·s for IZO TFTs, and the Vth shift caused by positive bias stress and negative bias illumination stress over 1000 s under 5700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO2 has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO2 recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.",
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Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction. / Kang, Jun Ki; Park, Sung Pyo; Na, Jae Won; Lee, Jin Hyeok; Kim, Dongwoo; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 22, 06.06.2018, p. 18837-18844.

Research output: Contribution to journalArticle

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