Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Solbaro Kim, Changheon Kim, Jihoon Na, Eunseok Oh, Chaehwan Jeong, Sangwoo Lim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Abstract: In-doped ZnO thin films were prepared by a sol–gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high In-doping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% In-doped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 × 10−2 Ω cm, while 57.1 Ω cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beam-treated ZnO thin film.

Original languageEnglish
Pages (from-to)790-799
Number of pages10
JournalJournal of Sol-Gel Science and Technology
Volume74
Issue number3
DOIs
Publication statusPublished - 2015 Jun 1

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Electron beams
Electric properties
electrical properties
Doping (additives)
electron beams
Thin films
thin films
electrical resistivity
Carrier concentration
Carrier mobility
Optical band gaps
Spin coating
deterioration
Conversion efficiency
Deterioration
coating
crystallinity
Solar cells
solar cells
degradation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kim, Solbaro ; Kim, Changheon ; Na, Jihoon ; Oh, Eunseok ; Jeong, Chaehwan ; Lim, Sangwoo. / Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment. In: Journal of Sol-Gel Science and Technology. 2015 ; Vol. 74, No. 3. pp. 790-799.
@article{ca9f4f5cb8084bebb6deacd80052367a,
title = "Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment",
abstract = "Abstract: In-doped ZnO thin films were prepared by a sol–gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high In-doping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol{\%}, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol{\%} In-doped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 × 10−2 Ω cm, while 57.1 Ω cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 {\%} for the cell with pristine ZnO thin film to 11.45 {\%} with the In-doped and electron beam-treated ZnO thin film.",
author = "Solbaro Kim and Changheon Kim and Jihoon Na and Eunseok Oh and Chaehwan Jeong and Sangwoo Lim",
year = "2015",
month = "6",
day = "1",
doi = "10.1007/s10971-015-3664-x",
language = "English",
volume = "74",
pages = "790--799",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer Netherlands",
number = "3",

}

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment. / Kim, Solbaro; Kim, Changheon; Na, Jihoon; Oh, Eunseok; Jeong, Chaehwan; Lim, Sangwoo.

In: Journal of Sol-Gel Science and Technology, Vol. 74, No. 3, 01.06.2015, p. 790-799.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

AU - Kim, Solbaro

AU - Kim, Changheon

AU - Na, Jihoon

AU - Oh, Eunseok

AU - Jeong, Chaehwan

AU - Lim, Sangwoo

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Abstract: In-doped ZnO thin films were prepared by a sol–gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high In-doping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% In-doped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 × 10−2 Ω cm, while 57.1 Ω cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beam-treated ZnO thin film.

AB - Abstract: In-doped ZnO thin films were prepared by a sol–gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high In-doping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% In-doped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 × 10−2 Ω cm, while 57.1 Ω cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beam-treated ZnO thin film.

UR - http://www.scopus.com/inward/record.url?scp=84940002928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940002928&partnerID=8YFLogxK

U2 - 10.1007/s10971-015-3664-x

DO - 10.1007/s10971-015-3664-x

M3 - Article

AN - SCOPUS:84940002928

VL - 74

SP - 790

EP - 799

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 3

ER -