Improvement in electrochemical performance of V2O5 by Cu doping

Yingjin Wei, Chang Wan Ryu, Kwang Bum Kim

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Cu0.04V2O5 was prepared by a precipitation method followed by heat treatment at 300 and 600 °C. The material prepared at 300 °C showed porous morphology, whereas that prepared at 600 °C was highly crystalline. X-ray diffraction, Raman scattering and Fourier transform infrared spectroscopy showed both materials exhibiting the same structure as that of V2O5, with a slight lattice expansion. X-ray absorption spectroscopy confirmed the presence of V4+ cations in Cu0.04V2O5, which would increase the electronic conductivity of V2O5. Cu0.04V2O5 showed better electrochemical performance than V2O5 because of its high electronic conductivity and good structural stability. The material prepared at 600 °C delivered a reversible discharge capacity over 160 mAh g-1 after 60 cycles at a C rate of C/5.6. The material prepared at 300 °C showed good high-rate performance, which delivered a reversible capacity ∼100 mAh g-1 when cycled at C/1.9. The discrepancy in the rate performance of Cu0.04V2O5 was attributed to the morphology of materials.

Original languageEnglish
Pages (from-to)386-392
Number of pages7
JournalJournal of Power Sources
Volume165
Issue number1
DOIs
Publication statusPublished - 2007 Feb 25

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Doping (additives)
conductivity
structural stability
electronics
absorption spectroscopy
heat treatment
x rays
infrared spectroscopy
X ray absorption spectroscopy
Raman spectra
cations
cycles
expansion
Fourier transform infrared spectroscopy
Cations
Raman scattering
diffraction
Positive ions
Heat treatment
vanadium pentoxide

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

Wei, Yingjin ; Ryu, Chang Wan ; Kim, Kwang Bum. / Improvement in electrochemical performance of V2O5 by Cu doping. In: Journal of Power Sources. 2007 ; Vol. 165, No. 1. pp. 386-392.
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Improvement in electrochemical performance of V2O5 by Cu doping. / Wei, Yingjin; Ryu, Chang Wan; Kim, Kwang Bum.

In: Journal of Power Sources, Vol. 165, No. 1, 25.02.2007, p. 386-392.

Research output: Contribution to journalArticle

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AB - Cu0.04V2O5 was prepared by a precipitation method followed by heat treatment at 300 and 600 °C. The material prepared at 300 °C showed porous morphology, whereas that prepared at 600 °C was highly crystalline. X-ray diffraction, Raman scattering and Fourier transform infrared spectroscopy showed both materials exhibiting the same structure as that of V2O5, with a slight lattice expansion. X-ray absorption spectroscopy confirmed the presence of V4+ cations in Cu0.04V2O5, which would increase the electronic conductivity of V2O5. Cu0.04V2O5 showed better electrochemical performance than V2O5 because of its high electronic conductivity and good structural stability. The material prepared at 600 °C delivered a reversible discharge capacity over 160 mAh g-1 after 60 cycles at a C rate of C/5.6. The material prepared at 300 °C showed good high-rate performance, which delivered a reversible capacity ∼100 mAh g-1 when cycled at C/1.9. The discrepancy in the rate performance of Cu0.04V2O5 was attributed to the morphology of materials.

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