Improvement in negative bias stress stability of solution-processed amorphous in-Ga-Zn-O thin-film transistors using hydrogen peroxide

Jeong Moo Kwon, Joohye Jung, You Seung Rim, Dong Lim Kim, Hyun Jae Kim

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47 Citations (Scopus)

Abstract

We have investigated the effect of hydrogen peroxide (H2O 2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm2 V-1 s-1 and 0.86 V/dec to 0.97 cm2 V-1 s-1 and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.

Original languageEnglish
Pages (from-to)3371-3377
Number of pages7
JournalACS Applied Materials and Interfaces
Volume6
Issue number5
DOIs
Publication statusPublished - 2014 Mar 12

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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