Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process

Mihyun Yoon, Kyungtaek Im, Jahyun Yang, Sangwoo Lim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7%, while that of Si-H2 mainly decreased to an initial XC of 60-70%. The XC of μc-Si with an initial XC of 7% increased by annealing. However, initial XC of 60% and 70% resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7%, the absorption coefficient increased as XC increased to 16%, but slightly decreased with XC values from 51% to 70%. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.

Original languageEnglish
Pages (from-to)1526-1531
Number of pages6
JournalPhysica B: Condensed Matter
Volume405
Issue number6
DOIs
Publication statusPublished - 2010 Mar 15

Fingerprint

Plasma enhanced chemical vapor deposition
Light absorption
optical absorption
Annealing
Crystalline materials
Thin films
annealing
thin films
Microcrystalline silicon
Crystals
crystals
absorptivity
Optical properties
Gases
vapor deposition
optical properties
silicon
gases

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process",
abstract = "Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7{\%}, while that of Si-H2 mainly decreased to an initial XC of 60-70{\%}. The XC of μc-Si with an initial XC of 7{\%} increased by annealing. However, initial XC of 60{\%} and 70{\%} resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7{\%}, the absorption coefficient increased as XC increased to 16{\%}, but slightly decreased with XC values from 51{\%} to 70{\%}. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.",
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Improvement in the optical absorption of PECVD microcrystalline Si thin film through modification of the crystalline fraction through an annealing process. / Yoon, Mihyun; Im, Kyungtaek; Yang, Jahyun; Lim, Sangwoo.

In: Physica B: Condensed Matter, Vol. 405, No. 6, 15.03.2010, p. 1526-1531.

Research output: Contribution to journalArticle

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PY - 2010/3/15

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N2 - Intrinsic microcrystalline silicon (μc-Si) thin films with varying crystalline fractions (XC) were deposited using plasma-enhanced chemical vapor deposition. Effort was made to modify the XC and optical properties by annealing at different temperatures, pressures, and ambient gases. After annealing, the amount of Si-H in the μc-Si thin film was decreased for an initial XC of 7%, while that of Si-H2 mainly decreased to an initial XC of 60-70%. The XC of μc-Si with an initial XC of 7% increased by annealing. However, initial XC of 60% and 70% resulted in a decrease of XC upon annealing. It is suggested that an increase in crystal size of μc-Si films by annealing decreases XC, while a decrease in crystal size increases XC. Depending on the annealing conditions, the optical absorption property of the μc-Si thin film changed. When the initial XC was 7%, the absorption coefficient increased as XC increased to 16%, but slightly decreased with XC values from 51% to 70%. Therefore, we suggest that there is an optimum XC that exhibits the highest optical absorption.

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