Improvement in the thermoelectric performance of the crystals of halogen-substituted In 4Se 3-xH 0.03 (H = F, Cl, Br, I)

Effect of halogen-substitution on the thermoelectric properties in In 4Se 3-x

Kyunghan Ahn, Eunseog Cho, Jong Soo Rhyee, Sang Il Kim, Sungwoo Hwang, Hyun Sik Kim, Sang Mock Lee, Kyu Hyoung Lee

Research output: Contribution to journalArticle

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Abstract

We explored the thermoelectric properties of the crystals of halogen-substituted In 4Se 3-xH 0.03 in an effort to understand the significant effects of halogen-substitution on both electrical and thermal transport properties of In 4Se 3-x crystals as well as the origin of the high thermoelectric performance over a wide temperature range in the chlorine-substitued crystal. The X-ray diffraction patterns and typical infrared absorption spectra of the crystals of In 4Se 3-xH 0.03 exhibit preferred oriented ac- or bc-planes of crystals with energy band gaps between 0.62 and 0.63 eV. The chlorine, bromine, and iodine-substituted In 4Se 3-xH 0.03 crystals exhibit significantly higher room temperature electrical conductivities than the unsubstituted and fluorine-substituted crystals. Except for fluorine, the other halogen-substituted in the In 4Se 3-xH 0.03 crystals show electron concentrations as comparable as the unsubstituted crystals. Thus, the substantial increase in electrical conductivity of the halogen-substituted crystals should result from a remarkable increase in Hall mobility. It is quite notable that the room temperature power factors of the halogen-substituted (such as Cl, Br, and I) crystals are significantly higher than that of the unsubstituted and F-substituted crystals, which is mainly due to the substantial increase in room temperature electrical conductivity. Finally, a relatively low lattice thermal conductivity combined with a high power factor results in a high ZT of ∼1.0 at ∼660 K for the crystal of In 4Se 2.32I 0.03.

Original languageEnglish
Pages (from-to)5730-5736
Number of pages7
JournalJournal of Materials Chemistry
Volume22
Issue number12
DOIs
Publication statusPublished - 2012 Mar 28

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Halogens
Substitution reactions
Crystals
Fluorine
Chlorine
Bromine
Hall mobility
Temperature
Infrared absorption
Iodine
Band structure
Transport properties
Diffraction patterns
Absorption spectra
Thermal conductivity
Energy gap

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

@article{f4b146643627486f9dd1613612f63903,
title = "Improvement in the thermoelectric performance of the crystals of halogen-substituted In 4Se 3-xH 0.03 (H = F, Cl, Br, I): Effect of halogen-substitution on the thermoelectric properties in In 4Se 3-x",
abstract = "We explored the thermoelectric properties of the crystals of halogen-substituted In 4Se 3-xH 0.03 in an effort to understand the significant effects of halogen-substitution on both electrical and thermal transport properties of In 4Se 3-x crystals as well as the origin of the high thermoelectric performance over a wide temperature range in the chlorine-substitued crystal. The X-ray diffraction patterns and typical infrared absorption spectra of the crystals of In 4Se 3-xH 0.03 exhibit preferred oriented ac- or bc-planes of crystals with energy band gaps between 0.62 and 0.63 eV. The chlorine, bromine, and iodine-substituted In 4Se 3-xH 0.03 crystals exhibit significantly higher room temperature electrical conductivities than the unsubstituted and fluorine-substituted crystals. Except for fluorine, the other halogen-substituted in the In 4Se 3-xH 0.03 crystals show electron concentrations as comparable as the unsubstituted crystals. Thus, the substantial increase in electrical conductivity of the halogen-substituted crystals should result from a remarkable increase in Hall mobility. It is quite notable that the room temperature power factors of the halogen-substituted (such as Cl, Br, and I) crystals are significantly higher than that of the unsubstituted and F-substituted crystals, which is mainly due to the substantial increase in room temperature electrical conductivity. Finally, a relatively low lattice thermal conductivity combined with a high power factor results in a high ZT of ∼1.0 at ∼660 K for the crystal of In 4Se 2.32I 0.03.",
author = "Kyunghan Ahn and Eunseog Cho and Rhyee, {Jong Soo} and Kim, {Sang Il} and Sungwoo Hwang and Kim, {Hyun Sik} and Lee, {Sang Mock} and Lee, {Kyu Hyoung}",
year = "2012",
month = "3",
day = "28",
doi = "10.1039/c2jm16369a",
language = "English",
volume = "22",
pages = "5730--5736",
journal = "Journal of Materials Chemistry",
issn = "0959-9428",
publisher = "Royal Society of Chemistry",
number = "12",

}

Improvement in the thermoelectric performance of the crystals of halogen-substituted In 4Se 3-xH 0.03 (H = F, Cl, Br, I) : Effect of halogen-substitution on the thermoelectric properties in In 4Se 3-x. / Ahn, Kyunghan; Cho, Eunseog; Rhyee, Jong Soo; Kim, Sang Il; Hwang, Sungwoo; Kim, Hyun Sik; Lee, Sang Mock; Lee, Kyu Hyoung.

In: Journal of Materials Chemistry, Vol. 22, No. 12, 28.03.2012, p. 5730-5736.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement in the thermoelectric performance of the crystals of halogen-substituted In 4Se 3-xH 0.03 (H = F, Cl, Br, I)

T2 - Effect of halogen-substitution on the thermoelectric properties in In 4Se 3-x

AU - Ahn, Kyunghan

AU - Cho, Eunseog

AU - Rhyee, Jong Soo

AU - Kim, Sang Il

AU - Hwang, Sungwoo

AU - Kim, Hyun Sik

AU - Lee, Sang Mock

AU - Lee, Kyu Hyoung

PY - 2012/3/28

Y1 - 2012/3/28

N2 - We explored the thermoelectric properties of the crystals of halogen-substituted In 4Se 3-xH 0.03 in an effort to understand the significant effects of halogen-substitution on both electrical and thermal transport properties of In 4Se 3-x crystals as well as the origin of the high thermoelectric performance over a wide temperature range in the chlorine-substitued crystal. The X-ray diffraction patterns and typical infrared absorption spectra of the crystals of In 4Se 3-xH 0.03 exhibit preferred oriented ac- or bc-planes of crystals with energy band gaps between 0.62 and 0.63 eV. The chlorine, bromine, and iodine-substituted In 4Se 3-xH 0.03 crystals exhibit significantly higher room temperature electrical conductivities than the unsubstituted and fluorine-substituted crystals. Except for fluorine, the other halogen-substituted in the In 4Se 3-xH 0.03 crystals show electron concentrations as comparable as the unsubstituted crystals. Thus, the substantial increase in electrical conductivity of the halogen-substituted crystals should result from a remarkable increase in Hall mobility. It is quite notable that the room temperature power factors of the halogen-substituted (such as Cl, Br, and I) crystals are significantly higher than that of the unsubstituted and F-substituted crystals, which is mainly due to the substantial increase in room temperature electrical conductivity. Finally, a relatively low lattice thermal conductivity combined with a high power factor results in a high ZT of ∼1.0 at ∼660 K for the crystal of In 4Se 2.32I 0.03.

AB - We explored the thermoelectric properties of the crystals of halogen-substituted In 4Se 3-xH 0.03 in an effort to understand the significant effects of halogen-substitution on both electrical and thermal transport properties of In 4Se 3-x crystals as well as the origin of the high thermoelectric performance over a wide temperature range in the chlorine-substitued crystal. The X-ray diffraction patterns and typical infrared absorption spectra of the crystals of In 4Se 3-xH 0.03 exhibit preferred oriented ac- or bc-planes of crystals with energy band gaps between 0.62 and 0.63 eV. The chlorine, bromine, and iodine-substituted In 4Se 3-xH 0.03 crystals exhibit significantly higher room temperature electrical conductivities than the unsubstituted and fluorine-substituted crystals. Except for fluorine, the other halogen-substituted in the In 4Se 3-xH 0.03 crystals show electron concentrations as comparable as the unsubstituted crystals. Thus, the substantial increase in electrical conductivity of the halogen-substituted crystals should result from a remarkable increase in Hall mobility. It is quite notable that the room temperature power factors of the halogen-substituted (such as Cl, Br, and I) crystals are significantly higher than that of the unsubstituted and F-substituted crystals, which is mainly due to the substantial increase in room temperature electrical conductivity. Finally, a relatively low lattice thermal conductivity combined with a high power factor results in a high ZT of ∼1.0 at ∼660 K for the crystal of In 4Se 2.32I 0.03.

UR - http://www.scopus.com/inward/record.url?scp=84863260711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863260711&partnerID=8YFLogxK

U2 - 10.1039/c2jm16369a

DO - 10.1039/c2jm16369a

M3 - Article

VL - 22

SP - 5730

EP - 5736

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 12

ER -