Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment

Jong Lam Lee, Dojin Kim, Sung Jae Maeng, Hyung Ho Park, Jin Young Kang, Yong Tak Lee

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH 4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

Original languageEnglish
Pages (from-to)3539-3542
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number7
DOIs
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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