Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH 4 ) 2 S x treatment

Jong Lam Lee, Dojin Kim, Sung Jae Maeng, Hyung-Ho Park, Jin Young Kang, Yong Tak Lee

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

A (NH 4 ) 2 S x solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH 4 ) 2 S x treatment. The (NH 4 ) 2 S x treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

Original languageEnglish
Pages (from-to)3539-3542
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number7
DOIs
Publication statusPublished - 1993 Dec 1

Fingerprint

field effect transistors
breakdown
electrical faults
metals
leakage
transistors
electrical properties
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Jong Lam ; Kim, Dojin ; Maeng, Sung Jae ; Park, Hyung-Ho ; Kang, Jin Young ; Lee, Yong Tak. / Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH 4 ) 2 S x treatment In: Journal of Applied Physics. 1993 ; Vol. 73, No. 7. pp. 3539-3542.
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Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH 4 ) 2 S x treatment . / Lee, Jong Lam; Kim, Dojin; Maeng, Sung Jae; Park, Hyung-Ho; Kang, Jin Young; Lee, Yong Tak.

In: Journal of Applied Physics, Vol. 73, No. 7, 01.12.1993, p. 3539-3542.

Research output: Contribution to journalArticle

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AU - Kim, Dojin

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AU - Kang, Jin Young

AU - Lee, Yong Tak

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