Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH 4 ) 2 S x treatment

Jong Lam Lee, Dojin Kim, Sung Jae Maeng, Hyung-Ho Park, Jin Young Kang, Yong Tak Lee

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

A (NH 4 ) 2 S x solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH 4 ) 2 S x treatment. The (NH 4 ) 2 S x treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.

Original languageEnglish
Pages (from-to)3539-3542
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number7
DOIs
Publication statusPublished - 1993 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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