A (NH 4 ) 2 S x solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH 4 ) 2 S x treatment. The (NH 4 ) 2 S x treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)