Improvement of contact resistance in transparent thin film transistor by applying an Al/SWCNTs bilayer as electrodes

Su Jeong Lee, Yun Cheol Kim, Tae Il Lee, Jung Han Kim, Chul Hong Kim, Gee Sung Chae, Jae Min Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Contact resistance has an important effect on the electrical characteristics of the thin film transistor (TFT). In the solution process, we present a study on the improvement of contact resistance between the single-walled carbon nanotubes (SWCNTs) and indium oxide (In2O 3). In order to reduce the high carrier injection barrier for SWCNTs, aluminum (Al) was deposited as a contact layer between the SWCNTs and In 2O3 films. Integrated device consisting of Al/SWCNT bilayers, In2O3 and hafnium oxide (HfO2) as source and drain electrodes, channel layers and gate insulator, respectively, were fabricated on indium tin oxide (ITO) glass, bottom gate, structure. The threshold voltage of 0.53 V, sub-threshold swing of 0.39 Vdec-1, field-effect mobility of 3.18 cm2 V-1s-1 and Ion / Ioff ratio of ∼106 were obtained. Furthermore, a transmittance of 69.82% was obtained.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
PublisherNano Science and Technology Institute
Pages17-20
Number of pages4
ISBN (Print)9781482258264
Publication statusPublished - 2014 Jan 1
EventNanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
Duration: 2014 Jun 152014 Jun 18

Publication series

NameTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Volume1

Other

OtherNanotechnology 2014: Graphene, CNTs, Particles, Films and Composites - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
CountryUnited States
CityWashington, DC
Period14/6/1514/6/18

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, S. J., Kim, Y. C., Lee, T. I., Kim, J. H., Kim, C. H., Chae, G. S., & Myoung, J. M. (2014). Improvement of contact resistance in transparent thin film transistor by applying an Al/SWCNTs bilayer as electrodes. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (pp. 17-20). (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 1). Nano Science and Technology Institute.