Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

Kwan Yup Shin, Young Jun Tak, Won Gi Kim, Seonghwan Hong, Hyun Jae Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μFE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm2/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 107 to (4.79 ± 1.54) × 108 compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Original languageEnglish
Pages (from-to)13278-13285
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number15
DOIs
Publication statusPublished - 2017 Apr 19

Fingerprint

Zinc Oxide
Nitrocellulose
Gallium
Indium
Collodion
Thin film transistors
Zinc oxide
Passivation
Oxide films
Nitrogen
Gases
Defects
Polymethyl Methacrylate
Polymethyl methacrylates
Threshold voltage
Carrier concentration
Display devices
Ions
Oxygen
Electrons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{be1d370534e84837a7fb951855c98f3c,
title = "Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer",
abstract = "In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μFE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm2/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 107 to (4.79 ± 1.54) × 108 compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.",
author = "Shin, {Kwan Yup} and Tak, {Young Jun} and Kim, {Won Gi} and Seonghwan Hong and Kim, {Hyun Jae}",
year = "2017",
month = "4",
day = "19",
doi = "10.1021/acsami.7b00257",
language = "English",
volume = "9",
pages = "13278--13285",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "15",

}

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer. / Shin, Kwan Yup; Tak, Young Jun; Kim, Won Gi; Hong, Seonghwan; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 15, 19.04.2017, p. 13278-13285.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

AU - Shin, Kwan Yup

AU - Tak, Young Jun

AU - Kim, Won Gi

AU - Hong, Seonghwan

AU - Kim, Hyun Jae

PY - 2017/4/19

Y1 - 2017/4/19

N2 - In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μFE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm2/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 107 to (4.79 ± 1.54) × 108 compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

AB - In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μFE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm2/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 107 to (4.79 ± 1.54) × 108 compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

UR - http://www.scopus.com/inward/record.url?scp=85018510345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018510345&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b00257

DO - 10.1021/acsami.7b00257

M3 - Article

AN - SCOPUS:85018510345

VL - 9

SP - 13278

EP - 13285

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 15

ER -