Abstract
Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
Original language | English |
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Article number | 126502 |
Journal | Japanese journal of applied physics |
Volume | 54 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2015 Dec |
Bibliographical note
Publisher Copyright:© 2015 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)