Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
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© 2015 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)