Abstract
Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
| Original language | English |
|---|---|
| Article number | 126502 |
| Journal | Japanese journal of applied physics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2015 Dec |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Jeong, W. H., Rim, Y. S., Kim, D. L., & Kim, H. J. (2015). Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c. Japanese journal of applied physics, 54(12), [126502]. https://doi.org/10.7567/JJAP.54.126502