Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c

Woong Hee Jeong, You Seung Rim, Dong Lim Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.

Original languageEnglish
Article number126502
JournalJapanese journal of applied physics
Volume54
Issue number12
DOIs
Publication statusPublished - 2015 Dec

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c'. Together they form a unique fingerprint.

  • Cite this