Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c

Woong Hee Jeong, You Seung Rim, Dong Lim Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.

Original languageEnglish
Article number126502
JournalJapanese Journal of Applied Physics
Volume54
Issue number12
DOIs
Publication statusPublished - 2015 Dec

Fingerprint

Thin film transistors
transistors
Vacuum
Annealing
Nitrogen
nitrogen
vacuum
annealing
thin films
Film thickness
Hysteresis
film thickness
hysteresis
insulators
traps

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c",
abstract = "Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.",
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Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c. / Jeong, Woong Hee; Rim, You Seung; Kim, Dong Lim; Kim, Hyun Jae.

In: Japanese Journal of Applied Physics, Vol. 54, No. 12, 126502, 12.2015.

Research output: Contribution to journalArticle

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AB - Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.

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