Abstract
Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
| Original language | English |
|---|---|
| Article number | 126502 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 54 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2015 Dec |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c. / Jeong, Woong Hee; Rim, You Seung; Kim, Dong Lim; Kim, Hyun Jae.
In: Japanese Journal of Applied Physics, Vol. 54, No. 12, 126502, 12.2015.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c
AU - Jeong, Woong Hee
AU - Rim, You Seung
AU - Kim, Dong Lim
AU - Kim, Hyun Jae
PY - 2015/12
Y1 - 2015/12
N2 - Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
AB - Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
UR - http://www.scopus.com/inward/record.url?scp=84948705526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84948705526&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.126502
DO - 10.7567/JJAP.54.126502
M3 - Article
AN - SCOPUS:84948705526
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
M1 - 126502
ER -