TY - JOUR
T1 - Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °c
AU - Jeong, Woong Hee
AU - Rim, You Seung
AU - Kim, Dong Lim
AU - Kim, Hyun Jae
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/12
Y1 - 2015/12
N2 - Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
AB - Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44cm2V-1 s-1 and a steeper subthreshold swing of 0.79V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
UR - http://www.scopus.com/inward/record.url?scp=84948705526&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84948705526&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.126502
DO - 10.7567/JJAP.54.126502
M3 - Article
AN - SCOPUS:84948705526
VL - 54
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 12
M1 - 126502
ER -