Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

Woong Hee Jeong; You Seung Rim; Dong Lim Kim; Heon Je Kim

Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

Woong Hee Jeong, You Seung Rim, Dong Lim Kim, Heon Je Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	54
Publication status	Published - 2015 Oct

Cite this

@article{8535d06f5c204193bbee841886d2827e,

title = "Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment",

author = "Jeong, {Woong Hee} and Rim, {You Seung} and Kim, {Dong Lim} and Kim, {Heon Je}",

year = "2015",

month = oct,

language = "English",

volume = "54",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

AU - Jeong, Woong Hee

AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Kim, Heon Je

PY - 2015/10

Y1 - 2015/10

M3 - Article

SN - 0021-4922

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

ER -