Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

Woong Hee Jeong, You Seung Rim, Dong Lim Kim, Heon Je Kim

Research output: Contribution to journalArticle

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume54
Publication statusPublished - 2015 Oct

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