Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

Woong Hee Jeong, You Seung Rim, Dong Lim Kim, Heon Je Kim

Research output: Contribution to journalArticle

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume54
Publication statusPublished - 2015 Oct

Cite this

@article{8535d06f5c204193bbee841886d2827e,
title = "Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment",
author = "Jeong, {Woong Hee} and Rim, {You Seung} and Kim, {Dong Lim} and Kim, {Heon Je}",
year = "2015",
month = "10",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Improvement of electrical characteristics on solution-processed InZnO thin-film transistor at 200ºC by vacuum annealing and nitrogen pressure treatment

AU - Jeong, Woong Hee

AU - Rim, You Seung

AU - Kim, Dong Lim

AU - Kim, Heon Je

PY - 2015/10

Y1 - 2015/10

M3 - Article

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -