Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy

Hyeon Sik Kim; Jaehun Jeong; Gi Hyeon Kwon; Hoedon Kwon; Min Baik; Mann Ho Cho

doi:10.1016/j.apsusc.2022.152507

Improvement of electrical performance using PtSe₂/PtTe₂ edge contact synthesized by molecular beam epitaxy

Hyeon Sik Kim, Jaehun Jeong, Gi Hyeon Kwon, Hoedon Kwon, Min Baik, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

One-dimensional (1D) edge contact is considered critical to reducing contact resistance between two-dimensional transition-metal dichalcogenides (TMDs) and contact metal and overcoming surface contact effects, such as surface damage and orbital hybridization. Although several studies have investigated edge contact, some problems such as inevitable etching damage and a limited area persist. Herein, a tellurization method is applied to a specific lateral region to fabricate PtTe₂/PtSe₂/PtTe₂ edge-contact field-effect transistors (FETs) without etching damage. High-resolution X-ray photoelectron spectroscopy and Raman spectroscopy are used to verify tellurization completion, which is evidenced by the complete transformation of PtSe₂ to PtTe₂ by the substitution of Se atoms with evaporated Te atoms. Furthermore, tellurization is applied to a specific lateral region by utilizing the hexagonal boron nitride to block the interdiffusion of evaporated Te atoms, which is confirmed by Raman spectroscopy and cross-sectional annular dark-field scanning transmission electron microscopy. Finally, the 1D edge-contact FETs fabricated by tellurization demonstrate a higher on–off ratio and carrier mobility than the surface-contact FET. Therefore, this method can be applied to various FETs based on TMDs for improving electrical performance through a reduction in contact resistance.

Original language	English
Article number	152507
Journal	Applied Surface Science
Volume	585
DOIs	https://doi.org/10.1016/j.apsusc.2022.152507
Publication status	Published - 2022 May 30

Bibliographical note

Funding Information:
The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM.

Funding Information:
The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM.

Publisher Copyright:
© 2022 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2022.152507

Cite this

@article{063a304fa1144efbb80124bc334b1231,

title = "Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy",

abstract = "One-dimensional (1D) edge contact is considered critical to reducing contact resistance between two-dimensional transition-metal dichalcogenides (TMDs) and contact metal and overcoming surface contact effects, such as surface damage and orbital hybridization. Although several studies have investigated edge contact, some problems such as inevitable etching damage and a limited area persist. Herein, a tellurization method is applied to a specific lateral region to fabricate PtTe2/PtSe2/PtTe2 edge-contact field-effect transistors (FETs) without etching damage. High-resolution X-ray photoelectron spectroscopy and Raman spectroscopy are used to verify tellurization completion, which is evidenced by the complete transformation of PtSe2 to PtTe2 by the substitution of Se atoms with evaporated Te atoms. Furthermore, tellurization is applied to a specific lateral region by utilizing the hexagonal boron nitride to block the interdiffusion of evaporated Te atoms, which is confirmed by Raman spectroscopy and cross-sectional annular dark-field scanning transmission electron microscopy. Finally, the 1D edge-contact FETs fabricated by tellurization demonstrate a higher on–off ratio and carrier mobility than the surface-contact FET. Therefore, this method can be applied to various FETs based on TMDs for improving electrical performance through a reduction in contact resistance.",

author = "Kim, {Hyeon Sik} and Jaehun Jeong and Kwon, {Gi Hyeon} and Hoedon Kwon and Min Baik and Cho, {Mann Ho}",

note = "Funding Information: The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM. Funding Information: The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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doi = "10.1016/j.apsusc.2022.152507",

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AU - Kim, Hyeon Sik

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AU - Baik, Min

AU - Cho, Mann Ho

N1 - Funding Information: The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM. Funding Information: The authors acknowledge the financial support from the National Research Foundation (NRF) (Grant No. 2017R1A5A1014862, SRC program: vdWMRC center). This work was partially supported by the academy–industry joint research program between Yonsei University and Samsung Electronics. The authors thank Hee-Suk Chung at the Jeonju of the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/5/30

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N2 - One-dimensional (1D) edge contact is considered critical to reducing contact resistance between two-dimensional transition-metal dichalcogenides (TMDs) and contact metal and overcoming surface contact effects, such as surface damage and orbital hybridization. Although several studies have investigated edge contact, some problems such as inevitable etching damage and a limited area persist. Herein, a tellurization method is applied to a specific lateral region to fabricate PtTe2/PtSe2/PtTe2 edge-contact field-effect transistors (FETs) without etching damage. High-resolution X-ray photoelectron spectroscopy and Raman spectroscopy are used to verify tellurization completion, which is evidenced by the complete transformation of PtSe2 to PtTe2 by the substitution of Se atoms with evaporated Te atoms. Furthermore, tellurization is applied to a specific lateral region by utilizing the hexagonal boron nitride to block the interdiffusion of evaporated Te atoms, which is confirmed by Raman spectroscopy and cross-sectional annular dark-field scanning transmission electron microscopy. Finally, the 1D edge-contact FETs fabricated by tellurization demonstrate a higher on–off ratio and carrier mobility than the surface-contact FET. Therefore, this method can be applied to various FETs based on TMDs for improving electrical performance through a reduction in contact resistance.

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