In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2020|
|Event||57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online|
Duration: 2020 Aug 3 → 2020 Aug 7
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea)
© 2020 SID.
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