Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region

I. Sak Lee; Jae Won Na; Byung Ha Kang; Hyung Tae Kim; Hyun Jae Kim

doi:10.1002/sdtp.14130

Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region

I. Sak Lee, Jae Won Na, Byung Ha Kang, Hyung Tae Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.

Original language	English
Pages (from-to)	1334-1337
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	51
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.14130
Publication status	Published - 2020
Event	57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 2020 Aug 3 → 2020 Aug 7

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea)

Publisher Copyright:
© 2020 SID.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.14130

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title = "Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region",

abstract = "In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.",

author = "Lee, {I. Sak} and Na, {Jae Won} and Kang, {Byung Ha} and Kim, {Hyung Tae} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) Publisher Copyright: {\textcopyright} 2020 SID.; 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 ; Conference date: 03-08-2020 Through 07-08-2020",

year = "2020",

doi = "10.1002/sdtp.14130",

language = "English",

volume = "51",

pages = "1334--1337",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

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}

Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region. / Lee, I. Sak; Na, Jae Won; Kang, Byung Ha et al.

In: Digest of Technical Papers - SID International Symposium, Vol. 51, No. 1, 2020, p. 1334-1337.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region

AU - Lee, I. Sak

AU - Na, Jae Won

AU - Kang, Byung Ha

AU - Kim, Hyung Tae

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) Publisher Copyright: © 2020 SID.

PY - 2020

Y1 - 2020

N2 - In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.

AB - In this research, polytetrafluoroethylene (PTFE) is proposed as a dopant for indium gallium zinc oxide (IGZO) to improve the electrical characteristics of IGZO TFT. Especially, PTFE is incorporated in the back channel region of IGZO TFT and this leads to improved electrical stability against positive bias stress (PBS) and negative bias illumination stress (NBIS). When compared with conventional IGZO TFT, the threshold voltage shifts of PTFE doped IGZO TFT after PBS and NBIS tests are drastically improved from 4.94 to 1.18 V and 16.63 to 6.31 V, respectively.

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EP - 1337

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020

Y2 - 3 August 2020 through 7 August 2020

ER -

Improvement of electrical stability of In-Ga-Zn-O thin-film transistors by incorporation of polytetrafluoroethylene in the back channel region

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