TY - GEN
T1 - Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film
AU - Yanp, Jun Kyu
AU - Kim, Woo Sik
AU - Park, Hyung Ho
PY - 2000
Y1 - 2000
N2 - Ferroelectric lead zirconate titanate (PZT) thin films have been investigated for a variety of applications such as piezoelectric, pyroelectric, electro-optic and ferroelectric devices. However, the degradation of ferroelectric properties induced by inter-diffusion or poor crystalline quality at the film-substrate interface leaves a problem to be solved still now. Many authors have tried to resolve these obstacles by using buffer layers or seed layers for low temperature process [1, 2]. Especially, sol-gel method is so attractive for its uniform control of composition and ease of layer-bylayer deposition. In this work, ultrathin PZT layer containing various contents of excess Pb was used as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode.
AB - Ferroelectric lead zirconate titanate (PZT) thin films have been investigated for a variety of applications such as piezoelectric, pyroelectric, electro-optic and ferroelectric devices. However, the degradation of ferroelectric properties induced by inter-diffusion or poor crystalline quality at the film-substrate interface leaves a problem to be solved still now. Many authors have tried to resolve these obstacles by using buffer layers or seed layers for low temperature process [1, 2]. Especially, sol-gel method is so attractive for its uniform control of composition and ease of layer-bylayer deposition. In this work, ultrathin PZT layer containing various contents of excess Pb was used as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode.
UR - http://www.scopus.com/inward/record.url?scp=84952042462&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952042462&partnerID=8YFLogxK
U2 - 10.1109/IMNC.2000.872719
DO - 10.1109/IMNC.2000.872719
M3 - Conference contribution
AN - SCOPUS:84952042462
T3 - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
SP - 216
EP - 217
BT - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2000
Y2 - 11 July 2000 through 13 July 2000
ER -