Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film

Jun Kyu Yanp, Woo Sik Kim, Hyung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ferroelectric lead zirconate titanate (PZT) thin films have been investigated for a variety of applications such as piezoelectric, pyroelectric, electro-optic and ferroelectric devices. However, the degradation of ferroelectric properties induced by inter-diffusion or poor crystalline quality at the film-substrate interface leaves a problem to be solved still now. Many authors have tried to resolve these obstacles by using buffer layers or seed layers for low temperature process [1, 2]. Especially, sol-gel method is so attractive for its uniform control of composition and ease of layer-bylayer deposition. In this work, ultrathin PZT layer containing various contents of excess Pb was used as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages216-217
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

Fingerprint

Polymethyl Methacrylate
Quality Control
Ferroelectric materials
Sol-gels
Seeds
Buffers
Electrodes
Ferroelectric devices
Gels
Thin films
Equipment and Supplies
Temperature
Buffer layers
Electrooptical effects
Sol-gel process
Seed
Lead
Crystalline materials
Degradation
Substrates

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yanp, J. K., Kim, W. S., & Park, H. H. (2000). Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 216-217). [872719] (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872719
Yanp, Jun Kyu ; Kim, Woo Sik ; Park, Hyung Ho. / Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 216-217 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).
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Yanp, JK, Kim, WS & Park, HH 2000, Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872719, Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000, Institute of Electrical and Electronics Engineers Inc., pp. 216-217, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872719

Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film. / Yanp, Jun Kyu; Kim, Woo Sik; Park, Hyung Ho.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 216-217 872719 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - Ferroelectric lead zirconate titanate (PZT) thin films have been investigated for a variety of applications such as piezoelectric, pyroelectric, electro-optic and ferroelectric devices. However, the degradation of ferroelectric properties induced by inter-diffusion or poor crystalline quality at the film-substrate interface leaves a problem to be solved still now. Many authors have tried to resolve these obstacles by using buffer layers or seed layers for low temperature process [1, 2]. Especially, sol-gel method is so attractive for its uniform control of composition and ease of layer-bylayer deposition. In this work, ultrathin PZT layer containing various contents of excess Pb was used as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode.

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Yanp JK, Kim WS, Park HH. Improvement of ferroelectric properties through the control of interfacial quality in sol-gel derived lead zirconate titanate thin film. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 216-217. 872719. (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). https://doi.org/10.1109/IMNC.2000.872719