Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics

Seok Joo Doh, Hyung Suk Jung, Yun Seok Kim, Ha Jin Lim, Jong Pyo Kim, Jung Hyoung Lee, Jong Ho Lee, Nae In Lee, Ho Kyu Kang, Kwang Pyuk Suh, Seong Geon Park, Sang Bom Kang, Gil Heyun Choi, Young Su Chung, Hion Suck Baik, Hyo Sik Chang, Mann-Ho Cho, Dae Won Moon, Hong Bae Park, Moonju Cho & 1 others Cheol Seong Hwang

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

For the first time, we have investigated the effect of ozone (O 3) pre-treatment on the Bias Temperature Instability (BTI) characteristics of high-k gate dielectrics. We found mat O 3 pre-treatment improved NBTI and electrical characteristics of HfAlON gate dielectric. We suggest that O 3 pre-treatment effectively suppress the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (∼1.1V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

Original languageEnglish
Pages (from-to)943-946
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

Fingerprint

Ozone
Gate dielectrics
pretreatment
ozone
Doping (additives)
Hydrogen
Electrodes
Arsenic
Electric potential
Polysilicon
Phosphorus
Nitrogen
life (durability)
Impurities
electrodes
Degradation
electric potential
4-nitrobenzylthioinosine
Negative bias temperature instability
Water

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Doh, Seok Joo ; Jung, Hyung Suk ; Kim, Yun Seok ; Lim, Ha Jin ; Kim, Jong Pyo ; Lee, Jung Hyoung ; Lee, Jong Ho ; Lee, Nae In ; Kang, Ho Kyu ; Suh, Kwang Pyuk ; Park, Seong Geon ; Kang, Sang Bom ; Choi, Gil Heyun ; Chung, Young Su ; Baik, Hion Suck ; Chang, Hyo Sik ; Cho, Mann-Ho ; Moon, Dae Won ; Park, Hong Bae ; Cho, Moonju ; Hwang, Cheol Seong. / Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics. In: Technical Digest - International Electron Devices Meeting. 2003 ; pp. 943-946.
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title = "Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics",
abstract = "For the first time, we have investigated the effect of ozone (O 3) pre-treatment on the Bias Temperature Instability (BTI) characteristics of high-k gate dielectrics. We found mat O 3 pre-treatment improved NBTI and electrical characteristics of HfAlON gate dielectric. We suggest that O 3 pre-treatment effectively suppress the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (∼1.1V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.",
author = "Doh, {Seok Joo} and Jung, {Hyung Suk} and Kim, {Yun Seok} and Lim, {Ha Jin} and Kim, {Jong Pyo} and Lee, {Jung Hyoung} and Lee, {Jong Ho} and Lee, {Nae In} and Kang, {Ho Kyu} and Suh, {Kwang Pyuk} and Park, {Seong Geon} and Kang, {Sang Bom} and Choi, {Gil Heyun} and Chung, {Young Su} and Baik, {Hion Suck} and Chang, {Hyo Sik} and Mann-Ho Cho and Moon, {Dae Won} and Park, {Hong Bae} and Moonju Cho and Hwang, {Cheol Seong}",
year = "2003",
month = "12",
day = "1",
language = "English",
pages = "943--946",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Doh, SJ, Jung, HS, Kim, YS, Lim, HJ, Kim, JP, Lee, JH, Lee, JH, Lee, NI, Kang, HK, Suh, KP, Park, SG, Kang, SB, Choi, GH, Chung, YS, Baik, HS, Chang, HS, Cho, M-H, Moon, DW, Park, HB, Cho, M & Hwang, CS 2003, 'Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics', Technical Digest - International Electron Devices Meeting, pp. 943-946.

Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics. / Doh, Seok Joo; Jung, Hyung Suk; Kim, Yun Seok; Lim, Ha Jin; Kim, Jong Pyo; Lee, Jung Hyoung; Lee, Jong Ho; Lee, Nae In; Kang, Ho Kyu; Suh, Kwang Pyuk; Park, Seong Geon; Kang, Sang Bom; Choi, Gil Heyun; Chung, Young Su; Baik, Hion Suck; Chang, Hyo Sik; Cho, Mann-Ho; Moon, Dae Won; Park, Hong Bae; Cho, Moonju; Hwang, Cheol Seong.

In: Technical Digest - International Electron Devices Meeting, 01.12.2003, p. 943-946.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics

AU - Doh, Seok Joo

AU - Jung, Hyung Suk

AU - Kim, Yun Seok

AU - Lim, Ha Jin

AU - Kim, Jong Pyo

AU - Lee, Jung Hyoung

AU - Lee, Jong Ho

AU - Lee, Nae In

AU - Kang, Ho Kyu

AU - Suh, Kwang Pyuk

AU - Park, Seong Geon

AU - Kang, Sang Bom

AU - Choi, Gil Heyun

AU - Chung, Young Su

AU - Baik, Hion Suck

AU - Chang, Hyo Sik

AU - Cho, Mann-Ho

AU - Moon, Dae Won

AU - Park, Hong Bae

AU - Cho, Moonju

AU - Hwang, Cheol Seong

PY - 2003/12/1

Y1 - 2003/12/1

N2 - For the first time, we have investigated the effect of ozone (O 3) pre-treatment on the Bias Temperature Instability (BTI) characteristics of high-k gate dielectrics. We found mat O 3 pre-treatment improved NBTI and electrical characteristics of HfAlON gate dielectric. We suggest that O 3 pre-treatment effectively suppress the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (∼1.1V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

AB - For the first time, we have investigated the effect of ozone (O 3) pre-treatment on the Bias Temperature Instability (BTI) characteristics of high-k gate dielectrics. We found mat O 3 pre-treatment improved NBTI and electrical characteristics of HfAlON gate dielectric. We suggest that O 3 pre-treatment effectively suppress the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (∼1.1V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

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M3 - Conference article

SP - 943

EP - 946

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -