Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics

Seok Joo Doh, Hyung Suk Jung, Yun Seok Kim, Ha Jin Lim, Jong Pyo Kim, Jung Hyoung Lee, Jong Ho Lee, Nae In Lee, Ho Kyu Kang, Kwang Pyuk Suh, Seong Geon Park, Sang Bom Kang, Gil Heyun Choi, Young Su Chung, Hion Suck Baik, Hyo Sik Chang, Mann Ho Cho, Dae Won Moon, Hong Bae Park, Moonju ChoCheol Seong Hwang

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11 Citations (Scopus)

Abstract

For the first time, we have investigated the effect of ozone (O 3) pre-treatment on the Bias Temperature Instability (BTI) characteristics of high-k gate dielectrics. We found mat O 3 pre-treatment improved NBTI and electrical characteristics of HfAlON gate dielectric. We suggest that O 3 pre-treatment effectively suppress the incorporation of the impurities (such as nitrogen (N), hydrogen (H) and water related species), resulting in the improvement of NBTI characteristics (-2.32V operating voltage for 10 years lifetime). For the PBTI characteristics, the high-k gate dielectric with poly-Si gate electrode was severely degraded We suggest that dopants (such as arsenic (As) and phosphorus (P)) in the gate electrode of nMOSFETs diffuse into the gate dielectrics, causing the severe degradation of PBTI characteristics (∼1.1V operating voltage for 10 years lifetime). We believe that the optimization in the high-k gate stack can improve the PBTI characteristics by suppressing the dopants incorporation.

Original languageEnglish
Pages (from-to)943-946
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003 Dec 1
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Doh, S. J., Jung, H. S., Kim, Y. S., Lim, H. J., Kim, J. P., Lee, J. H., Lee, J. H., Lee, N. I., Kang, H. K., Suh, K. P., Park, S. G., Kang, S. B., Choi, G. H., Chung, Y. S., Baik, H. S., Chang, H. S., Cho, M. H., Moon, D. W., Park, H. B., ... Hwang, C. S. (2003). Improvement of NBTI and Electrical Characteristics by Ozone Pre-treatment and PBTI issues in HfAIO(N) High-k Gate Dielectrics. Technical Digest - International Electron Devices Meeting, 943-946.