Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Byung Du Ahn, Hyun Suk Kim, Dong Jin Yun, Jin Seong Park, Hyun Jae Kim

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The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

Original languageEnglish
Pages (from-to)Q95-Q98
JournalECS Journal of Solid State Science and Technology
Issue number5
Publication statusPublished - 2014


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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