Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy

Junhwa-Jung, Youngkeun Kim, Il Yong Jang, Byung Gook Kim, Chan Uk Jeon, Minwook Kang, Changmin Lee, Jae Won Hahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

According to the design rule shrinkage, more precise control of mask CD, including mean to target and uniformity, is required in lithography process. Since dry etching is one of the most critical processes to determine CD qualities in photomask, optical emission spectroscopy (OES) to monitor plasma status during dry etching process could be useful. However, it is not possible to obtain distributional information of plasma with a conventional OES tool because the OES acquires totally integrated signals of light from the chamber. To overcome the limit of OES, we set up a spatially resolved (SR)-OES tool and measure the distribution of radicals in plasma during dry etch process. The SR-OES consists of a series of lenses, apertures, and a pinhole as a spatial filter which enable us to focus on certain area in the chamber, to extract the emitted light from plasma, and to perform the spectroscopic analysis. The Argon based actinometry combined with SR-OES shows spatially distinguished peaks related to the etch rate of Chromium on photomask. In this paper, we present experimental results of SR-OES installed on a commercial photomask dry etcher and discuss its practical effectiveness by correlation of the results with chamber etch rate.

Original languageEnglish
Title of host publicationPhotomask Technology 2016
EditorsBryan S. Kasprowicz, Peter D. Buck
PublisherSPIE
Volume9985
ISBN (Electronic)9781510603745
DOIs
Publication statusPublished - 2016 Jan 1
EventPhotomask Technology 2016 - San Jose, United States
Duration: 2016 Sep 122016 Sep 14

Other

OtherPhotomask Technology 2016
CountryUnited States
CitySan Jose
Period16/9/1216/9/14

Fingerprint

CD Uniformity
Photomasks
Photomask
Optical emission spectroscopy
photomasks
optical emission spectroscopy
Spectroscopy
Plasma
Plasmas
Dry etching
chambers
Etching
etching
Chromium
Spectroscopic analysis
Design Rules
Argon
spectroscopic analysis
pinholes
Shrinkage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Junhwa-Jung, Kim, Y., Jang, I. Y., Kim, B. G., Jeon, C. U., Kang, M., ... Hahn, J. W. (2016). Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. In B. S. Kasprowicz, & P. D. Buck (Eds.), Photomask Technology 2016 (Vol. 9985). [99851S] SPIE. https://doi.org/10.1117/12.2242406
Junhwa-Jung ; Kim, Youngkeun ; Jang, Il Yong ; Kim, Byung Gook ; Jeon, Chan Uk ; Kang, Minwook ; Lee, Changmin ; Hahn, Jae Won. / Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. Photomask Technology 2016. editor / Bryan S. Kasprowicz ; Peter D. Buck. Vol. 9985 SPIE, 2016.
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Junhwa-Jung, Kim, Y, Jang, IY, Kim, BG, Jeon, CU, Kang, M, Lee, C & Hahn, JW 2016, Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. in BS Kasprowicz & PD Buck (eds), Photomask Technology 2016. vol. 9985, 99851S, SPIE, Photomask Technology 2016, San Jose, United States, 16/9/12. https://doi.org/10.1117/12.2242406

Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. / Junhwa-Jung; Kim, Youngkeun; Jang, Il Yong; Kim, Byung Gook; Jeon, Chan Uk; Kang, Minwook; Lee, Changmin; Hahn, Jae Won.

Photomask Technology 2016. ed. / Bryan S. Kasprowicz; Peter D. Buck. Vol. 9985 SPIE, 2016. 99851S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Junhwa-Jung, Kim Y, Jang IY, Kim BG, Jeon CU, Kang M et al. Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. In Kasprowicz BS, Buck PD, editors, Photomask Technology 2016. Vol. 9985. SPIE. 2016. 99851S https://doi.org/10.1117/12.2242406