Abstract
According to the design rule shrinkage, more precise control of mask CD, including mean to target and uniformity, is required in lithography process. Since dry etching is one of the most critical processes to determine CD qualities in photomask, optical emission spectroscopy (OES) to monitor plasma status during dry etching process could be useful. However, it is not possible to obtain distributional information of plasma with a conventional OES tool because the OES acquires totally integrated signals of light from the chamber. To overcome the limit of OES, we set up a spatially resolved (SR)-OES tool and measure the distribution of radicals in plasma during dry etch process. The SR-OES consists of a series of lenses, apertures, and a pinhole as a spatial filter which enable us to focus on certain area in the chamber, to extract the emitted light from plasma, and to perform the spectroscopic analysis. The Argon based actinometry combined with SR-OES shows spatially distinguished peaks related to the etch rate of Chromium on photomask. In this paper, we present experimental results of SR-OES installed on a commercial photomask dry etcher and discuss its practical effectiveness by correlation of the results with chamber etch rate.
| Original language | English |
|---|---|
| Title of host publication | Photomask Technology 2016 |
| Editors | Bryan S. Kasprowicz, Peter D. Buck |
| Publisher | SPIE |
| Volume | 9985 |
| ISBN (Electronic) | 9781510603745 |
| DOIs | |
| Publication status | Published - 2016 Jan 1 |
| Event | Photomask Technology 2016 - San Jose, United States Duration: 2016 Sep 12 → 2016 Sep 14 |
Other
| Other | Photomask Technology 2016 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 16/9/12 → 16/9/14 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy. / Junhwa-Jung; Kim, Youngkeun; Jang, Il Yong; Kim, Byung Gook; Jeon, Chan Uk; Kang, Minwook; Lee, Changmin; Hahn, Jae Won.
Photomask Technology 2016. ed. / Bryan S. Kasprowicz; Peter D. Buck. Vol. 9985 SPIE, 2016. 99851S.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Improvement of photomask CD uniformity using spatially resolved optical emission spectroscopy
AU - Junhwa-Jung,
AU - Kim, Youngkeun
AU - Jang, Il Yong
AU - Kim, Byung Gook
AU - Jeon, Chan Uk
AU - Kang, Minwook
AU - Lee, Changmin
AU - Hahn, Jae Won
PY - 2016/1/1
Y1 - 2016/1/1
N2 - According to the design rule shrinkage, more precise control of mask CD, including mean to target and uniformity, is required in lithography process. Since dry etching is one of the most critical processes to determine CD qualities in photomask, optical emission spectroscopy (OES) to monitor plasma status during dry etching process could be useful. However, it is not possible to obtain distributional information of plasma with a conventional OES tool because the OES acquires totally integrated signals of light from the chamber. To overcome the limit of OES, we set up a spatially resolved (SR)-OES tool and measure the distribution of radicals in plasma during dry etch process. The SR-OES consists of a series of lenses, apertures, and a pinhole as a spatial filter which enable us to focus on certain area in the chamber, to extract the emitted light from plasma, and to perform the spectroscopic analysis. The Argon based actinometry combined with SR-OES shows spatially distinguished peaks related to the etch rate of Chromium on photomask. In this paper, we present experimental results of SR-OES installed on a commercial photomask dry etcher and discuss its practical effectiveness by correlation of the results with chamber etch rate.
AB - According to the design rule shrinkage, more precise control of mask CD, including mean to target and uniformity, is required in lithography process. Since dry etching is one of the most critical processes to determine CD qualities in photomask, optical emission spectroscopy (OES) to monitor plasma status during dry etching process could be useful. However, it is not possible to obtain distributional information of plasma with a conventional OES tool because the OES acquires totally integrated signals of light from the chamber. To overcome the limit of OES, we set up a spatially resolved (SR)-OES tool and measure the distribution of radicals in plasma during dry etch process. The SR-OES consists of a series of lenses, apertures, and a pinhole as a spatial filter which enable us to focus on certain area in the chamber, to extract the emitted light from plasma, and to perform the spectroscopic analysis. The Argon based actinometry combined with SR-OES shows spatially distinguished peaks related to the etch rate of Chromium on photomask. In this paper, we present experimental results of SR-OES installed on a commercial photomask dry etcher and discuss its practical effectiveness by correlation of the results with chamber etch rate.
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U2 - 10.1117/12.2242406
DO - 10.1117/12.2242406
M3 - Conference contribution
AN - SCOPUS:85006992975
VL - 9985
BT - Photomask Technology 2016
A2 - Kasprowicz, Bryan S.
A2 - Buck, Peter D.
PB - SPIE
ER -