Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

J. H. Park, S. W. Kim, J. H. Kim, D. H. Ko, Z. Wu, S. L. Cho, D. Ahn, D. H. Ahn, J. M. Lee, S. W. Nam

Research output: Contribution to journalArticle

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Abstract

In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

Original languageEnglish
Article number087119
JournalAIP Advances
Volume5
Issue number8
DOIs
Publication statusPublished - 2015 Aug 1

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phase change materials
activation energy
endurance
high speed
nucleation
crystallization
nitrogen
cycles
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, J. H. ; Kim, S. W. ; Kim, J. H. ; Ko, D. H. ; Wu, Z. ; Cho, S. L. ; Ahn, D. ; Ahn, D. H. ; Lee, J. M. ; Nam, S. W. / Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films. In: AIP Advances. 2015 ; Vol. 5, No. 8.
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abstract = "In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1{\%} failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27{\%} and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.",
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Park, JH, Kim, SW, Kim, JH, Ko, DH, Wu, Z, Cho, SL, Ahn, D, Ahn, DH, Lee, JM & Nam, SW 2015, 'Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films', AIP Advances, vol. 5, no. 8, 087119. https://doi.org/10.1063/1.4928447

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films. / Park, J. H.; Kim, S. W.; Kim, J. H.; Ko, D. H.; Wu, Z.; Cho, S. L.; Ahn, D.; Ahn, D. H.; Lee, J. M.; Nam, S. W.

In: AIP Advances, Vol. 5, No. 8, 087119, 01.08.2015.

Research output: Contribution to journalArticle

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AU - Park, J. H.

AU - Kim, S. W.

AU - Kim, J. H.

AU - Ko, D. H.

AU - Wu, Z.

AU - Cho, S. L.

AU - Ahn, D.

AU - Ahn, D. H.

AU - Lee, J. M.

AU - Nam, S. W.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

AB - In this study, we propose a nitrogen-incorporated GeBiTe ternary phase of N7.9(Ge46.9Bi7.2Te45.9) as a phase change material for reliable PCM (Phase Change Memory) with high speed operation. We found that the N7.9(Ge46.9Bi7.2Te45.9) film shows the resistance value of 40 kΩ after annealing at 440oC for 10 minutes, which is much higher than the value of 3.4 kΩ in the case of conventional N7.0(Ge22.0Sb22.0Te56.0) films. A set operation time of 14 nsec was achieved in the devices due to the increased probability of the nucleation by the addition of the elemental Bi. The long data retention time of 10 years at 85oC on the base of 1% failure was obtained as the result of higher activation energy of 2.52 eV for the crystallization compared to the case of N7.0(Ge22.0Sb22.0Te56.0) film, in which the activation energy is 2.1 eV. In addition, a reset current reduction of 27% and longer cycles of endurance as much as 2 order of magnitude compared to the case of N7.0(Ge22.0Sb22.0Te56.0) were observed at a set operation time of 14 nsec. Our results show that N7.9(Ge46.9Bi7.2Te45.9) is highly promising for use as a phase change material in reliable PCMs with high performance and also in forthcoming storage class memory applications, too.

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