Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

J. H. Park, S. W. Kim, J. H. Kim, D. H. Ko, Z. Wu, S. L. Cho, D. Ahn, D. H. Ahn, J. M. Lee, S. W. Nam

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Physics & Astronomy