Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

Joon Seop Kwak, Hong Koo Baik, Jong Hoon Kim, Sung Man Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films.

Original languageEnglish
Pages (from-to)2832-2834
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number22
DOIs
Publication statusPublished - 1998 Dec 1

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insertion
bombardment
ions
barrier layers
densification
grain boundaries
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films.",
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Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film. / Kwak, Joon Seop; Baik, Hong Koo; Kim, Jong Hoon; Lee, Sung Man.

In: Applied Physics Letters, Vol. 72, No. 22, 01.12.1998, p. 2832-2834.

Research output: Contribution to journalArticle

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AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Kim, Jong Hoon

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