Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

Joon Seop Kwak, Hong Koo Baik, Jong Hoon Kim, Sung Man Lee

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Abstract

In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films.

Original languageEnglish
Pages (from-to)2832-2834
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number22
DOIs
Publication statusPublished - 1998 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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