Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

Woo Sig Min, Sung Gyu Pyo, Heon Do Kim, Sibum Kim, Tae Kwon Lee, Sang Kyun Park, Hyun Chul Sohn

Research output: Contribution to journalConference article

Abstract

The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

Original languageEnglish
Pages (from-to)619-623
Number of pages5
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2001 Dec 1
EventAdvanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada
Duration: 2001 Oct 82001 Oct 11

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Physical vapor deposition
Textures
Degradation
Copper
Vacuum
Oxygen

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

Min, W. S., Pyo, S. G., Kim, H. D., Kim, S., Lee, T. K., Park, S. K., & Sohn, H. C. (2001). Improvement of TaNx barrier effectiveness without Cu (111) texture degradation. Advanced Metallization Conference (AMC), 619-623.
Min, Woo Sig ; Pyo, Sung Gyu ; Kim, Heon Do ; Kim, Sibum ; Lee, Tae Kwon ; Park, Sang Kyun ; Sohn, Hyun Chul. / Improvement of TaNx barrier effectiveness without Cu (111) texture degradation. In: Advanced Metallization Conference (AMC). 2001 ; pp. 619-623.
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abstract = "The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 {\AA} were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 {\AA}) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.",
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Improvement of TaNx barrier effectiveness without Cu (111) texture degradation. / Min, Woo Sig; Pyo, Sung Gyu; Kim, Heon Do; Kim, Sibum; Lee, Tae Kwon; Park, Sang Kyun; Sohn, Hyun Chul.

In: Advanced Metallization Conference (AMC), 01.12.2001, p. 619-623.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improvement of TaNx barrier effectiveness without Cu (111) texture degradation

AU - Min, Woo Sig

AU - Pyo, Sung Gyu

AU - Kim, Heon Do

AU - Kim, Sibum

AU - Lee, Tae Kwon

AU - Park, Sang Kyun

AU - Sohn, Hyun Chul

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

AB - The barrier effectiveness of the thin ionized PVD TaNx film was improved by exposing in oxygen atmosphere before copper deposition. The extremely thin ionized PVD TaNx films (x=0.5) below 30 Å were deposited on 8 inch bare Si wafers and followed by the ionized PVD Cu (500 Å) deposition in situ. They were annealed at the range of 300°C to 450°C in vacuum for 30 minutes. XRD analysis of the Cu film with the last double layered TaNx film showed strong Cu (111) peak.

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