Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

Hyoungsub Kim, Sunyoung Sohn, Donggeun Jung, Wan Joo Maeng, Hyungjun Kim, Tae Sang Kim, Jungseok Hahn, Sangyun Lee, Yeonjin Yi, Mann Ho Cho

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

Original languageEnglish
Pages (from-to)1140-1145
Number of pages6
JournalOrganic Electronics
Volume9
Issue number6
DOIs
Publication statusPublished - 2008 Dec

Fingerprint

Contact resistance
contact resistance
Tin oxides
indium oxides
Indium
Oxides
tin oxides
metal oxides
interlayers
Metals
Atomic layer deposition
atomic layer epitaxy
Thin film transistors
Photoelectron spectroscopy
Ultraviolet spectroscopy
Permittivity
transistors
diagrams
photoelectron spectroscopy
permittivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Hyoungsub ; Sohn, Sunyoung ; Jung, Donggeun ; Maeng, Wan Joo ; Kim, Hyungjun ; Kim, Tae Sang ; Hahn, Jungseok ; Lee, Sangyun ; Yi, Yeonjin ; Cho, Mann Ho. / Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers. In: Organic Electronics. 2008 ; Vol. 9, No. 6. pp. 1140-1145.
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abstract = "Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.",
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Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers. / Kim, Hyoungsub; Sohn, Sunyoung; Jung, Donggeun; Maeng, Wan Joo; Kim, Hyungjun; Kim, Tae Sang; Hahn, Jungseok; Lee, Sangyun; Yi, Yeonjin; Cho, Mann Ho.

In: Organic Electronics, Vol. 9, No. 6, 12.2008, p. 1140-1145.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

AU - Kim, Hyoungsub

AU - Sohn, Sunyoung

AU - Jung, Donggeun

AU - Maeng, Wan Joo

AU - Kim, Hyungjun

AU - Kim, Tae Sang

AU - Hahn, Jungseok

AU - Lee, Sangyun

AU - Yi, Yeonjin

AU - Cho, Mann Ho

PY - 2008/12

Y1 - 2008/12

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AB - Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

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