Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers

Hyoungsub Kim, Sunyoung Sohn, Donggeun Jung, Wan Joo Maeng, Hyungjun Kim, Tae Sang Kim, Jungseok Hahn, Sangyun Lee, Yeonjin Yi, Mann Ho Cho

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Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface.

Original languageEnglish
Pages (from-to)1140-1145
Number of pages6
JournalOrganic Electronics
Issue number6
Publication statusPublished - 2008 Dec


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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