Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects

Windu Sari, Tae Kwang Eom, Chan Wook Jeon, Hyunchul Sohn, Soo Hyun Kim

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.

Original languageEnglish
Pages (from-to)H248-H251
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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