Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects

Windu Sari, Tae Kwang Eom, Chan Wook Jeon, Hyunchul Sohn, Soo Hyun Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number7
DOIs
Publication statusPublished - 2009 Aug 28

Fingerprint

Diffusion barriers
Annealing
Thin films
Sheet resistance
thin films
High resolution transmission electron microscopy
X ray diffraction analysis
nanostructure (characteristics)
annealing
barrier layers
attack
transmission electron microscopy
high resolution
matrices
x rays

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

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abstract = "A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.",
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Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects. / Sari, Windu; Eom, Tae Kwang; Jeon, Chan Wook; Sohn, Hyunchul; Kim, Soo Hyun.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 7, 28.08.2009.

Research output: Contribution to journalArticle

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T1 - Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects

AU - Sari, Windu

AU - Eom, Tae Kwang

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AU - Kim, Soo Hyun

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AB - A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.

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