Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects

Windu Sari; Tae Kwang Eom; Chan Wook Jeon; Hyunchul Sohn; Soo Hyun Kim

doi:10.1149/1.3117242

Improvement of the diffusion barrier performance of ru by incorporating a WN_x Thin film for direct-plateable Cu interconnects

Windu Sari, Tae Kwang Eom, Chan Wook Jeon, Hyunchul Sohn, Soo Hyun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A sputter-prepared Ru (7 nm)/WN_x (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WN_x into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WN_x bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu₃ Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WN_x film with a nanocrystalline structure embedded in an amorphous matrix.

Original language	English
Pages (from-to)	H248-H251
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3117242
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.3117242

Cite this

@article{6a974e63362c47f2a6780251097eb417,

title = "Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects",

abstract = "A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.",

author = "Windu Sari and Eom, {Tae Kwang} and Jeon, {Chan Wook} and Hyunchul Sohn and Kim, {Soo Hyun}",

year = "2009",

doi = "10.1149/1.3117242",

language = "English",

volume = "12",

pages = "H248--H251",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Improvement of the diffusion barrier performance of ru by incorporating a WNx Thin film for direct-plateable Cu interconnects

AU - Sari, Windu

AU - Eom, Tae Kwang

AU - Jeon, Chan Wook

AU - Sohn, Hyunchul

AU - Kim, Soo Hyun

PY - 2009

Y1 - 2009

N2 - A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.

AB - A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/ WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750°C for 30 min, while the Ru single layer failed after annealing at 450°C by the formation of Cu silicide (″ -Cu3 Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix.

UR - http://www.scopus.com/inward/record.url?scp=69149109170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69149109170&partnerID=8YFLogxK

U2 - 10.1149/1.3117242

DO - 10.1149/1.3117242

M3 - Article

AN - SCOPUS:69149109170

SN - 1099-0062

VL - 12

SP - H248-H251

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Improvement of the diffusion barrier performance of ru by incorporating a WN_x Thin film for direct-plateable Cu interconnects

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this