Improvement of the stability under high voltage and high temperature stress by using nitrogen doped IGZO TFTs

In Tak Cho, Jiyong Noh, Pilsang Yun, Jaeman Jang, Dohyung Lee, Ju Heyuck Baeck, Seok Woo Lee, Kwon Shik Park, Sooyoung Yoon, Jang Yeon Kwon, Inbyeong Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The stability under high gate/drain voltage and high temperature stress is the most important property for the commercial display and automobile display. In this paper, we report the improvement results about the abnormal behavior of Vth(-) shift under high temperature PBTS and hump degradation of subthreshold slope under high bias stress by using nitrogen doped IGZO TFTs.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages302-304
Number of pages3
ISBN (Electronic)9781510883918
Publication statusPublished - 2018
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18/12/1218/12/14

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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