Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer

Zuzanna Liliental Weber, H. Fujioka, H. Sohn, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages377-382
Number of pages6
ISBN (Print)1558992243
Publication statusPublished - 1994
EventProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume325
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period93/11/2993/12/1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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