Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer

Zuzanna Liliental Weber, H. Fujioka, H. Sohn, E. R. Weber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages377-382
Number of pages6
Volume325
ISBN (Print)1558992243
Publication statusPublished - 1994 Jan 1
EventProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 1

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period93/11/2993/12/1

Fingerprint

Buffer layers
High resolution transmission electron microscopy
Leakage currents
Surface morphology
Photoluminescence
Diodes
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Weber, Z. L., Fujioka, H., Sohn, H., & Weber, E. R. (1994). Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer. In Materials Research Society Symposium Proceedings (Vol. 325, pp. 377-382). Publ by Materials Research Society.
Weber, Zuzanna Liliental ; Fujioka, H. ; Sohn, H. ; Weber, E. R. / Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer. Materials Research Society Symposium Proceedings. Vol. 325 Publ by Materials Research Society, 1994. pp. 377-382
@inproceedings{d10004af8e4e4c069fb9ac585b32d223,
title = "Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer",
abstract = "Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.",
author = "Weber, {Zuzanna Liliental} and H. Fujioka and H. Sohn and Weber, {E. R.}",
year = "1994",
month = "1",
day = "1",
language = "English",
isbn = "1558992243",
volume = "325",
pages = "377--382",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

Weber, ZL, Fujioka, H, Sohn, H & Weber, ER 1994, Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer. in Materials Research Society Symposium Proceedings. vol. 325, Publ by Materials Research Society, pp. 377-382, Proceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications, Boston, MA, USA, 93/11/29.

Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer. / Weber, Zuzanna Liliental; Fujioka, H.; Sohn, H.; Weber, E. R.

Materials Research Society Symposium Proceedings. Vol. 325 Publ by Materials Research Society, 1994. p. 377-382.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer

AU - Weber, Zuzanna Liliental

AU - Fujioka, H.

AU - Sohn, H.

AU - Weber, E. R.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

AB - Superior electrical and optical quality of GaAs grown on Si with an inserted low-temperature (LT)-GaAs buffer-layer was demonstrated. Photoluminescence intensity was increasing and leakage current of Schottky diodes build on such a structure was decreasing by few orders of magnitude. These observations were correlated with structural studies employing classical and high-resolution transmission electron microscopy (TEM). Bending of the threading dislocations and their interaction was observed at the interface between a cap GaAs layer and the LT-GaAs layer. This dislocation interaction results in the reduction of dislocation density by at least one order of magnitude or more compared for the GaAs layers with the same thickness grown on Si. The surface morphology of the cap GaAs layer is improving as well.

UR - http://www.scopus.com/inward/record.url?scp=0028292889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028292889&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558992243

VL - 325

SP - 377

EP - 382

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

ER -

Weber ZL, Fujioka H, Sohn H, Weber ER. Improvement of the structural quality of GaAs layers grown on Si with LT-GaAs intermediate layer. In Materials Research Society Symposium Proceedings. Vol. 325. Publ by Materials Research Society. 1994. p. 377-382