Improvement of thermal stability of Ni germanide using a NiPt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs

Ying Ying Zhang, Jungwoo Oh, Shi Guang Li, Soon Yen Jung, Kee Young Park, Ga Won Lee, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Hi Deok Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In this paper, thermally stable Ni germanide using a NiPt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed NiPt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 °C for 30 min. In addition, the surface of the NiPt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as PtxGey and Ni xPt1-xGey can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed NiPt(1%) alloy could be promising for high-mobility Ge MOSFET applications.

Original languageEnglish
Article number5075627
Pages (from-to)258-263
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume9
Issue number2
DOIs
Publication statusPublished - 2010 Mar 1

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Thermodynamic stability
Substrates
Rapid thermal processing
Sheet resistance
Temperature
Melting point
Agglomeration
X ray photoelectron spectroscopy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Zhang, Ying Ying ; Oh, Jungwoo ; Li, Shi Guang ; Jung, Soon Yen ; Park, Kee Young ; Lee, Ga Won ; Majhi, Prashant ; Tseng, Hsing Huang ; Jammy, Raj ; Lee, Hi Deok. / Improvement of thermal stability of Ni germanide using a NiPt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs. In: IEEE Transactions on Nanotechnology. 2010 ; Vol. 9, No. 2. pp. 258-263.
@article{38466654e50c4f58ab641c479e9950b4,
title = "Improvement of thermal stability of Ni germanide using a NiPt(1{\%}) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs",
abstract = "In this paper, thermally stable Ni germanide using a NiPt(1{\%}) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed NiPt(1{\%}) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 °C for 30 min. In addition, the surface of the NiPt(1{\%}) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as PtxGey and Ni xPt1-xGey can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed NiPt(1{\%}) alloy could be promising for high-mobility Ge MOSFET applications.",
author = "Zhang, {Ying Ying} and Jungwoo Oh and Li, {Shi Guang} and Jung, {Soon Yen} and Park, {Kee Young} and Lee, {Ga Won} and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Lee, {Hi Deok}",
year = "2010",
month = "3",
day = "1",
doi = "10.1109/TNANO.2009.2025129",
language = "English",
volume = "9",
pages = "258--263",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

Zhang, YY, Oh, J, Li, SG, Jung, SY, Park, KY, Lee, GW, Majhi, P, Tseng, HH, Jammy, R & Lee, HD 2010, 'Improvement of thermal stability of Ni germanide using a NiPt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs', IEEE Transactions on Nanotechnology, vol. 9, no. 2, 5075627, pp. 258-263. https://doi.org/10.1109/TNANO.2009.2025129

Improvement of thermal stability of Ni germanide using a NiPt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs. / Zhang, Ying Ying; Oh, Jungwoo; Li, Shi Guang; Jung, Soon Yen; Park, Kee Young; Lee, Ga Won; Majhi, Prashant; Tseng, Hsing Huang; Jammy, Raj; Lee, Hi Deok.

In: IEEE Transactions on Nanotechnology, Vol. 9, No. 2, 5075627, 01.03.2010, p. 258-263.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement of thermal stability of Ni germanide using a NiPt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs

AU - Zhang, Ying Ying

AU - Oh, Jungwoo

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Lee, Ga Won

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Lee, Hi Deok

PY - 2010/3/1

Y1 - 2010/3/1

N2 - In this paper, thermally stable Ni germanide using a NiPt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed NiPt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 °C for 30 min. In addition, the surface of the NiPt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as PtxGey and Ni xPt1-xGey can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed NiPt(1%) alloy could be promising for high-mobility Ge MOSFET applications.

AB - In this paper, thermally stable Ni germanide using a NiPt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed NiPt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 °C for 30 min. In addition, the surface of the NiPt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as PtxGey and Ni xPt1-xGey can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed NiPt(1%) alloy could be promising for high-mobility Ge MOSFET applications.

UR - http://www.scopus.com/inward/record.url?scp=77949363001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949363001&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2009.2025129

DO - 10.1109/TNANO.2009.2025129

M3 - Article

VL - 9

SP - 258

EP - 263

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 2

M1 - 5075627

ER -