Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

Hong Sik Shin, Se Kyung Oh, Min Ho Kang, Jae Hyung Jang, Jungwoo Oh, Prashant Majhi, Raj Jammy, Yi Sun Chung, Sang Soo Kim, Da Soon Lee, Song Jae Lee, Hi Deok Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation. Ge metal oxide semiconductor field effect transistors (Ge-MOSFETs) have received a lot of attention because of their higher carrier mobility compared with Si. Other advantages of Ge are its lower melting point and lower thermal budget processes compared with Si. However, Ge technology also has disadvantage. Currently, Ge MOSFET devices face several challenges such as water solubility, poor stability of germanium oxides, and small band gap [1-2]. The smaller band gap of Ge leads to higher off-current in MOSFET due to its higher source/drain junction leakage and worse SCE.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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