Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

Hong Sik Shin, Se Kyung Oh, Min Ho Kang, Jae Hyung Jang, Jungwoo Oh, Prashant Majhi, Raj Jammy, Yi Sun Chung, Sang Soo Kim, Da Soon Lee, Song Jae Lee, Hi Deok Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation. Ge metal oxide semiconductor field effect transistors (Ge-MOSFETs) have received a lot of attention because of their higher carrier mobility compared with Si. Other advantages of Ge are its lower melting point and lower thermal budget processes compared with Si. However, Ge technology also has disadvantage. Currently, Ge MOSFET devices face several challenges such as water solubility, poor stability of germanium oxides, and small band gap [1-2]. The smaller band gap of Ge leads to higher off-current in MOSFET due to its higher source/drain junction leakage and worse SCE.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

Fingerprint

Palladium
Sputtering
Thermodynamic stability
Nickel
Silicon
MOSFET devices
Energy gap
Germanium oxides
Carrier mobility
Graphene
Melting point
Solubility
Degradation
Water

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Shin, H. S., Oh, S. K., Kang, M. H., Jang, J. H., Oh, J., Majhi, P., ... Lee, H. D. (2011). Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135248] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135248
Shin, Hong Sik ; Oh, Se Kyung ; Kang, Min Ho ; Jang, Jae Hyung ; Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj ; Chung, Yi Sun ; Kim, Sang Soo ; Lee, Da Soon ; Lee, Song Jae ; Lee, Hi Deok. / Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).
@inproceedings{10d76cf0e696418380f8841db182496b,
title = "Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET",
abstract = "As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation. Ge metal oxide semiconductor field effect transistors (Ge-MOSFETs) have received a lot of attention because of their higher carrier mobility compared with Si. Other advantages of Ge are its lower melting point and lower thermal budget processes compared with Si. However, Ge technology also has disadvantage. Currently, Ge MOSFET devices face several challenges such as water solubility, poor stability of germanium oxides, and small band gap [1-2]. The smaller band gap of Ge leads to higher off-current in MOSFET due to its higher source/drain junction leakage and worse SCE.",
author = "Shin, {Hong Sik} and Oh, {Se Kyung} and Kang, {Min Ho} and Jang, {Jae Hyung} and Jungwoo Oh and Prashant Majhi and Raj Jammy and Chung, {Yi Sun} and Kim, {Sang Soo} and Lee, {Da Soon} and Lee, {Song Jae} and Lee, {Hi Deok}",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/ISDRS.2011.6135248",
language = "English",
isbn = "9781457717550",
series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

}

Shin, HS, Oh, SK, Kang, MH, Jang, JH, Oh, J, Majhi, P, Jammy, R, Chung, YS, Kim, SS, Lee, DS, Lee, SJ & Lee, HD 2011, Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135248, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135248

Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET. / Shin, Hong Sik; Oh, Se Kyung; Kang, Min Ho; Jang, Jae Hyung; Oh, Jungwoo; Majhi, Prashant; Jammy, Raj; Chung, Yi Sun; Kim, Sang Soo; Lee, Da Soon; Lee, Song Jae; Lee, Hi Deok.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135248 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET

AU - Shin, Hong Sik

AU - Oh, Se Kyung

AU - Kang, Min Ho

AU - Jang, Jae Hyung

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Chung, Yi Sun

AU - Kim, Sang Soo

AU - Lee, Da Soon

AU - Lee, Song Jae

AU - Lee, Hi Deok

PY - 2011/12/1

Y1 - 2011/12/1

N2 - As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation. Ge metal oxide semiconductor field effect transistors (Ge-MOSFETs) have received a lot of attention because of their higher carrier mobility compared with Si. Other advantages of Ge are its lower melting point and lower thermal budget processes compared with Si. However, Ge technology also has disadvantage. Currently, Ge MOSFET devices face several challenges such as water solubility, poor stability of germanium oxides, and small band gap [1-2]. The smaller band gap of Ge leads to higher off-current in MOSFET due to its higher source/drain junction leakage and worse SCE.

AB - As the scaling of silicon (Si) CMOS device continues, new materials such as SiGe, Ge, group III-V semiconductor, CNT, and Graphene are introduced due to the limit of Si CMOS such as short channel effects (SCE) and mobility degradation. Ge metal oxide semiconductor field effect transistors (Ge-MOSFETs) have received a lot of attention because of their higher carrier mobility compared with Si. Other advantages of Ge are its lower melting point and lower thermal budget processes compared with Si. However, Ge technology also has disadvantage. Currently, Ge MOSFET devices face several challenges such as water solubility, poor stability of germanium oxides, and small band gap [1-2]. The smaller band gap of Ge leads to higher off-current in MOSFET due to its higher source/drain junction leakage and worse SCE.

UR - http://www.scopus.com/inward/record.url?scp=84863133296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863133296&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2011.6135248

DO - 10.1109/ISDRS.2011.6135248

M3 - Conference contribution

SN - 9781457717550

T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

ER -

Shin HS, Oh SK, Kang MH, Jang JH, Oh J, Majhi P et al. Improvement of thermal stability of Ni-germanide with co-sputtering of nickel and palladium for high performance Ge CMOSFET. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135248. (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135248